Zobrazeno 1 - 10
of 154
pro vyhledávání: '"A. E. Kaloyeros"'
Publikováno v:
Electronic Materials, Vol 3, Iss 1, Pp 27-40 (2022)
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window rangi
Externí odkaz:
https://doaj.org/article/f59107ae9a7e45609938548776be6dcb
Publikováno v:
ECS Transactions. 98:121-135
Results are presented from an exploratory study of near-room-temperature pulsed deposition of SiCxNy thin films using 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and soft remote ammonia (NH3) plasma co-reactants. The process involved four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72762d299556d03c3e913e6c5c51bc96
https://doi.org/10.1149/09803.0121ecst
https://doi.org/10.1149/09803.0121ecst
Publikováno v:
Micromachines, Vol 2, Iss 1, Pp 1-16 (2011)
The relative adhesion of two genetically engineered polypeptides termed as H6-(YEHK)x21-H6 and C6-(YEHK)X21-H6 has been investigated following growth and self-assembly on highly oriented pyrolytic graphite (HOPG), SiO2, Ni, and Au substrates to study
Externí odkaz:
https://doaj.org/article/e28c33d7dd24418397c353414c02bb9d
Publikováno v:
Inorganic Chemistry. 58:3050-3057
A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0128529b03b938c9c8cfb05a0b4401d9
https://doi.org/10.1021/acs.inorgchem.8b02761
https://doi.org/10.1021/acs.inorgchem.8b02761
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P119-P152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52266f2ac5f64b3de6b58e18556f9faa
https://doi.org/10.1149/2.0051902jss
https://doi.org/10.1149/2.0051902jss
Publikováno v:
Journal of Vacuum Science & Technology B. 40:040601
Silicon nitride (SiNx, x ∼ 1) thin films were deposited by chemical vapor deposition on silicon oxide (SiO2) substrates by combining controlled pulses of the precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) with a continuous ammoni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae3da011d922d168ed8f69f6d074dc1
https://doi.org/10.1116/6.0001820
https://doi.org/10.1116/6.0001820
Autor:
Alex E. Kaloyeros, Spyros Gallis
Publikováno v:
Applied Physics Letters. 120:231104
Semiconductor nanowires show great potential for controlling light–matter interactions. Moreover, their polarization-dependent optical properties, primarily enabled by their dielectric mismatch, are a significant requisite for a plethora of emergin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cabb7688135a3247602feb9cbf306a
https://doi.org/10.1063/5.0089433
https://doi.org/10.1063/5.0089433
Autor:
Barry C. Arkles, Alain E. Kaloyeros
Publikováno v:
ECS Meeting Abstracts. :855-855
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::742dfc968f288a42f14368b59449d988
https://doi.org/10.1149/ma2021-0229855mtgabs
https://doi.org/10.1149/ma2021-0229855mtgabs
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P691-P714
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe51868f4bc4910c0c8e59a56be1606
https://doi.org/10.1149/2.0011710jss
https://doi.org/10.1149/2.0011710jss
Publikováno v:
Thin Solid Films. 711:138299
High-quality silicon nitride (SiNx) thin films were grown by remote-plasma-activated pulsed chemical vapor deposition (P-CVD) from the source precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and remote ammonia (NH3) plasma on silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231e358e7f177ad4371f2f6177be4a0a
https://doi.org/10.1016/j.tsf.2020.138299
https://doi.org/10.1016/j.tsf.2020.138299