Zobrazeno 1 - 10
of 59
pro vyhledávání: '"A. E. Kalmykov"'
Publikováno v:
Technical Physics Letters. 47:893-896
Autor:
W. V. Lundin, Andrey E. Nikolaev, A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, A. V. Sakharov
Publikováno v:
Technical Physics Letters. 46:991-995
Two buffer structures based on AlxGa1 – xN solutions with silicon doping and without it have been studied by transmission electron microscopy. The structures have been grown on silicon substrates with the (111) orientation by metalorganic vapor-pha
Autor:
L. M. Sorokin, Peter Panfilov, T. S. Argunova, Zh. V. Gudkina, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov, D. V. Zaytsev, E. D. Nazarova
Publikováno v:
Technical Physics. 65:1391-1402
Dentin in the human tooth is a natural composite material with a complex multilevel hierarchical structure and consists of micro and nanostructures that are related to each other in a complex interrelation governed by laws that have not been fully un
Autor:
V. N. Jmerik, A. V. Myasoedov, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, Dmitrii V. Nechaev
Publikováno v:
Technical Physics Letters. 46:543-547
We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with
Autor:
S. A. Kukushkin, A. V. Myasoedov, A. E. Kalmykov, L. M. Sorokin, M. Yu. Gutkin, V. N. Bessolov
Publikováno v:
Physics of the Solid State. 61:2316-2320
Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C-SiC/Si(001) template. It is shown that the propagation of a dislocatio
Autor:
Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin, Kirill D. Shcherbachev
Publikováno v:
Crystals, Vol 7, Iss 6, p 163 (2017)
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective.
Externí odkaz:
https://doaj.org/article/a1b85bf43fe349259e80f98fb313d9d1
Publikováno v:
Technical Physics Letters. 44:926-929
The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defec
Publikováno v:
Journal of Physics: Conference Series. 2131:032105
In the publication the authors solve the problem of forming the optimal volume of control actions to maintain the technical systems (TS) service availability. To achieve the desired result the analysis of the TS as a service object was carried out. A
Autor:
S. S. Zapalova, V. V. Golubkov, A.V. Myasoedov, Olga Dymshits, A. A. Zhilin, Irina Alekseeva, A. A. Hubetsov, M. P. Shepilov, A. E. Kalmykov
Publikováno v:
Journal of Non-Crystalline Solids. 473:152-169
The effect of low NiO doping (0–0.15 mol%) on the extinction coefficient of zinc aluminosilicate glass-ceramics prepared by five different two-stage heat treatments was studied experimentally. Extinction coefficient vs wavelength presented as a log
Autor:
Bela Shanina, S. K. Gordeev, A. Yu. Rogachev, A. E. Kalmykov, R. N. Kyutt, V. V. Sokolov, A. M. Danishevskii
Publikováno v:
Physics of the Solid State. 59:2082-2088
The structural and magnetometric characteristics of a nanoporous carbon with nickel clusters in nanopores have been studied. The main attention is focused on the fact of substantial decrease in the nickel magnetization as nickel has a close contact t