Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A. E. Akhkubekov"'
Publikováno v:
Semiconductors. 43:586-589
The Deep Level Transient Spectroscopy (DLTS) method is one of the basic methods widely used for determining the parameters of defects giving rise to deep levels in the band gap of a semiconductor material. It is proposed using the L-curve approach wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df329198cbcfa549dbf12487171c800
https://doi.org/10.1134/s1063782609050078
https://doi.org/10.1134/s1063782609050078
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 72:1584-1588
It has been shown for the first time that implementation of the L-curve approach to choose the regularization parameter for Laplace DLTS significantly increases the reliability of the data obtained. The possibility of considerable reduction of the me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46974615f06705220ebd3ac6642ed503
https://doi.org/10.3103/s1062873808110348
https://doi.org/10.3103/s1062873808110348
Publikováno v:
Technical Physics Letters. Nov2010, Vol. 36 Issue 11, p1001-1005. 5p. 3 Graphs.
Publikováno v:
Semiconductors. May2009, Vol. 43 Issue 5, p586-589. 4p. 3 Graphs.
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics; Nov2008, Vol. 72 Issue 11, p1584-1588, 5p