Zobrazeno 1 - 10
of 89
pro vyhledávání: '"A. Driskill-Smith"'
Publikováno v:
In Microelectronic Engineering 2004 73:547-552
Publikováno v:
In Microelectronic Engineering 2000 53(1):179-182
Autor:
Xiao Luo, A. Driskill-Smith, Kiseok Moon, D. K. Lottis, Eugene Chen, Adrian E. Ong, Xueti Tang, Vladimir Nikitin, Dmytro Apalkov, Mohamad Towfik Krounbi, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 9:1-35
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c2775c0687744375cc431ae25e7d21
https://doi.org/10.1145/2463585.2463589
https://doi.org/10.1145/2463585.2463589
Autor:
D. K. Lottis, S.J. Poon, Vladimir Nikitin, Mircea R. Stan, Mohamad Towfik Krounbi, William H. Butler, Kiseok Moon, Rosa A. Lukaszew, A. Driskill-Smith, P. B. Visscher, Steven M. Watts, Dmytro Apalkov, Jiwei Lu, Eugene Chen, Subhadra Gupta, Avik W. Ghosh, Tim Mewes, Stuart A. Wolf, R. Kawakami, X. Tang, Alexey Vasilyevitch Khvalkovskiy, A. Ong, Claudia Mewes
Publikováno v:
IEEE Transactions on Magnetics. 48:3025-3030
We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F2 (F=54 nm). A dual tunnel barrier MTJ structure was found to have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5de19d964ed399718a490a3b2b3dbc1
https://doi.org/10.1109/tmag.2012.2198451
https://doi.org/10.1109/tmag.2012.2198451
Autor:
Vladimir Nikitin, A. Driskill-Smith, Dmytro Apalkov, Zhitao Diao, Eugene Chen, Steven M. Watts
Publikováno v:
IEEE Transactions on Magnetics. 46:2240-2243
Spin transfer torque switching-basis of operation of innovative memory technology-STT-RAM (spin transfer torque memory) has been actively studied in the recent years with two prevalent technologies emerging at fast pace: in-plane and perpendicular. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ed998af9043f7c8627ab43fecd4961
https://doi.org/10.1109/tmag.2010.2041330
https://doi.org/10.1109/tmag.2010.2041330
Autor:
Hoa Van Do, Kentaro Takano, S A MacDonald, Ching Tsang, Yoshihiro Ikeda, M.K. Ho, Jordan A. Katine, M.-C. Cyrille, A. Polcyn, Patrick Clinton Arnett, Andreas Moser, A. Driskill-Smith, Margaret Evans Best, G. Samadi, Mustafa Michael Pinarbasi, J. Moore, D. Druist, W. Weresin, Ernesto E. Marinero
Publikováno v:
IEEE Transactions on Magnetics. 40:295-300
The track width performance of giant magnetoresistive (GMR) read heads defined by e-beam lithography was studied in a series of recording tests. Results on longitudinal media showed slow reductions of magnetic versus physical read widths below 100 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531fe8e493b2d092512435ad2d450a4a
https://doi.org/10.1109/tmag.2003.821171
https://doi.org/10.1109/tmag.2003.821171
Publikováno v:
Microelectronic Engineering. 53:179-182
An encapsulated vacuum nanotriode with horizontal and vertical dimensions of 100 nm has been fabricated and characterized. Electrons are field-emitted from tungsten nanopillars fabricated on the cathode having tip radii of 1 nm and heights of up to 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9527a7463c83734b51a22226a772c46b
https://doi.org/10.1016/s0167-9317(00)00291-4
https://doi.org/10.1016/s0167-9317(00)00291-4
Autor:
Jeffrey R. Childress, A. Driskill-Smith, Jordan A. Katine, M.-C. Cyrille, Stefan Maat, K. Carey, Ching Tsang, Thomas Dudley Boone, K. Mackay, Matthew J. Carey, Neil Smith
Publikováno v:
IEEE Transactions on Magnetics. 42:2444-2446
All-metallic giant magnetoresistive (GMR) sensors in a current-perpendicular-to-plane (CPP) geometry are attractive candidates for future high-density recording sensors due to their low intrinsic resistance. With increasing recording density the cros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50f05d41c08f2e1942482572af292527
https://doi.org/10.1109/tmag.2006.878815
https://doi.org/10.1109/tmag.2006.878815
Autor:
R. Kawakami, Vladimir Nikitin, X. Tang, Dmytro Apalkov, Eugene Chen, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts, D. K. Lottis, X. Luo, K. Moon, Adrian E. Ong, A. Driskill-Smith, Mohamad Towfik Krounbi
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eab7a036b936448f87f1178a62a5bd5
https://doi.org/10.1109/imw.2011.5873205
https://doi.org/10.1109/imw.2011.5873205