Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. Di Gaspare (1)"'
Autor:
V. Giliberti (1, A. Di Gaspare (1), E. Giovine (1), S. Boppel (3), A. Lisauskas (3), H.G. Roskos (3), M. Ortolani (1
Publikováno v:
Applied physics letters 103 (2013): 093505-1–093505-5. doi:10.1063/1.4819734
info:cnr-pdr/source/autori:V. Giliberti (1,2), A. Di Gaspare (1), E. Giovine (1), S. Boppel (3), A. Lisauskas (3), H.G. Roskos (3), M. Ortolani (1,2)/titolo:Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs%2FInGaAs%2FAlGaAs heterostructure field effect transistor/doi:10.1063%2F1.4819734/rivista:Applied physics letters/anno:2013/pagina_da:093505-1/pagina_a:093505-5/intervallo_pagine:093505-1–093505-5/volume:103
info:cnr-pdr/source/autori:V. Giliberti (1,2), A. Di Gaspare (1), E. Giovine (1), S. Boppel (3), A. Lisauskas (3), H.G. Roskos (3), M. Ortolani (1,2)/titolo:Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs%2FInGaAs%2FAlGaAs heterostructure field effect transistor/doi:10.1063%2F1.4819734/rivista:Applied physics letters/anno:2013/pagina_da:093505-1/pagina_a:093505-5/intervallo_pagine:093505-1–093505-5/volume:103
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 μm. We investigated frequency mixing in the transistor's channel by measuring, with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ff728ae0e2a74c15c37976842758bf4
http://www.cnr.it/prodotto/i/257171
http://www.cnr.it/prodotto/i/257171
Autor:
M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)
Publikováno v:
Documentation des 6es Journées Francaises du Terahertz., La Grande Motte, Montpellier, 2011
info:cnr-pdr/source/autori:M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)/congresso_nome:Documentation des 6es Journées Francaises du Terahertz./congresso_luogo:La Grande Motte, Montpellier,/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)/congresso_nome:Documentation des 6es Journées Francaises du Terahertz./congresso_luogo:La Grande Motte, Montpellier,/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::63b15c3785b1d08cc836428e6e4fb0aa
http://www.cnr.it/prodotto/i/81672
http://www.cnr.it/prodotto/i/81672
Autor:
G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)
Publikováno v:
9th IEEE Conference on Nanotechnology (IEEE-NANO), pp. 190–193, Genoa, ITALY, JUL 26-30, 2009
info:cnr-pdr/source/autori:G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)/congresso_nome:9th IEEE Conference on Nanotechnology (IEEE-NANO)/congresso_luogo:Genoa, ITALY/congresso_data:JUL 26-30, 2009/anno:2009/pagina_da:190/pagina_a:193/intervallo_pagine:190–193
info:cnr-pdr/source/autori:G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)/congresso_nome:9th IEEE Conference on Nanotechnology (IEEE-NANO)/congresso_luogo:Genoa, ITALY/congresso_data:JUL 26-30, 2009/anno:2009/pagina_da:190/pagina_a:193/intervallo_pagine:190–193
We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::0b80f5465dd213b0e33482b1defa7ee7
https://publications.cnr.it/doc/260693
https://publications.cnr.it/doc/260693