Zobrazeno 1 - 10
of 532
pro vyhledávání: '"A. D. Starikov"'
Publikováno v:
Russia & World: Sc. Dialogue. 1:138-161
The materials of the scientific discussion contain basic ideas, pronounced by Russian and foreign participants in the International scientific discussion on the subject of “Communication regimes in Latvia, Lithuania and Estonia”. The discussion
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Publikováno v:
2007 Cleantech Conference and Trade Show Cleantech 2007 ISBN: 9780429187469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69fbc27aa0b75c693210a30690f5c0c8
https://doi.org/10.1201/9780429187469-33
https://doi.org/10.1201/9780429187469-33
Publikováno v:
Journal of Crystal Growth. 404:1-8
A systematic study is presented on the effects of process parameters of S-gun configured DC magnetron sputtered ZrN thin films on c-plane Al2O3 substrates. Using a quartz crystal microbalance the deposition rate of ZrN is investigated as a function o
Autor:
S. D. Starikov, Vladimir N. Polkovnikov, S. Yu. Zuev, Yu. A. Vainer, M. M. Barysheva, N. N. Salashchenko
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 77:24-27
The results from measuring reflection factors are presented for multilayer La/B4/C mirrors with barrier layers of carbon and scandium. It is shown that a higher reflection factor is obtained by depositing a layer of carbon onto a surface of boron car
The self-induced growth of GaN nanocolumns (NCs) on SixN1−x/Si (111) is investigated as a function of the ratio of molecular to atomic nitrogen species generated via plasma assisted molecular beam epitaxy. Relative concentrations of the molecular a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c256deca41ba04a78996c20ff67a8990
https://orca.cardiff.ac.uk/id/eprint/115531/1/1.4943179.pdf
https://orca.cardiff.ac.uk/id/eprint/115531/1/1.4943179.pdf
Autor:
Jorlandio F. Felix, Mohsin Aziz, Mohamed Henini, D. Starikov, D. Taylor, Abdelmadjid Mesli, R. Pillai, Abdelhak Bensaoula, M. O. Lemine, C. Boney, R. H. Mari
Publikováno v:
physica status solidi c. 10:101-104
This paper is based on the investigation of electrically active defects in dual band UV/IR photodiodes using Deep Level Transient Spectroscopy (DLTS). The UV/IR photodiodes were fabricated by growing Al0.7Ga0.3N layers on silicon substrate to obtain
Publikováno v:
Journal of Crystal Growth. 311:2033-2038
The absence of spontaneous and piezoelectric polarization in nonpolar-oriented III nitrides can improve emission efficiency in light-emitting devices due to the absence of electrostatic fields. It is therefore of interest to study the growth processe
Autor:
Olaru, Iulia1 (AUTHOR), Stefanache, Alina2 (AUTHOR) alina.stefanache@umfiasi.ro, Gutu, Cristian1 (AUTHOR) alina.stefanache@umfiasi.ro, Lungu, Ionut Iulian2 (AUTHOR), Mihai, Cozmin3 (AUTHOR), Grierosu, Carmen3 (AUTHOR), Calin, Gabriela3 (AUTHOR), Marcu, Constantin1 (AUTHOR), Ciuhodaru, Tudor3 (AUTHOR)
Publikováno v:
Polymers (20734360). Dec2024, Vol. 16 Issue 23, p3247. 19p.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:970-973
Wide direct band gap III nitride materials have opened up many new optoelectronic applications because they allow access to a very wide spectral range, from 200nmto1.77μm, from a single material system. Both light emission sources and photodetectors