Zobrazeno 1 - 10
of 29
pro vyhledávání: '"A. D. Mokrushin"'
Publikováno v:
Russian Journal of Physical Chemistry A. 92:1355-1361
The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3516035ebaa94627e6a9054d04e7e695
https://doi.org/10.1134/s0036024418070269
https://doi.org/10.1134/s0036024418070269
Publikováno v:
Semiconductors. 52:352-358
Proton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::119e3b9bbc7d27cf3f4b02b30af81660
https://doi.org/10.1134/s106378261803020x
https://doi.org/10.1134/s106378261803020x
Publikováno v:
High Energy Chemistry. 51:420-423
The dark process (posteffect) of increasing the electrical conductivity and spectral absorption in the graphene oxide (GO) film after its preliminary UV irradiation has been studied. The posteffect is due to the conformational relaxation of the struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af28d56acc2ea07e0f76497df6196c5c
https://doi.org/10.1134/s001814391706008x
https://doi.org/10.1134/s001814391706008x
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:637-640
The O/C atomic ratios in films of oxidized and partially reduced graphene oxide are determined via the Rutherford backscattering of H+ ions. In addition, the conductivity σ is measured. It is established that the reduction noticeably decreases the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59066a5a12fbb59948cd72a29e2e7008
https://doi.org/10.1134/s1027451016030290
https://doi.org/10.1134/s1027451016030290
Publikováno v:
Поверхность. Рентгеновские, синхротронные и нейтронные исследования. :69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f438bda8a98d28011878bd5de1adf15d
https://doi.org/10.7868/s0207352816060135
https://doi.org/10.7868/s0207352816060135
Publikováno v:
Technical Physics Letters. 42:671-673
Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defc66f20d5c88077e4bca80545b7518
https://doi.org/10.1134/s1063785016070129
https://doi.org/10.1134/s1063785016070129
Autor:
V. M. Morilova, Sergey Evsyukov, N. A. Moskvina, A. D. Mokrushin, V. P. Andreichuk, Vladimir L. Kuznetsov, E. V. Egorov, L. A. Pesin, O. V. Koryakova, I. V. Gribov
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:446-451
Under the action of ionizing radiation on a PVDF film, fluorine and hydrogen atoms bound to its linear carbon chain with single chemical bonds detach. Free atoms and HF molecules diffuse toward the film surface and escape from it. As a result of irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfff89bb5d5e45b0a05a9d8c70c4e87
https://doi.org/10.1134/s1027451013030117
https://doi.org/10.1134/s1027451013030117
Publikováno v:
Applied Physics A. 122
GO films exhibited dual proton and electron conduction. Proton conduction showed the exponential dependence on relative humidity with the activation energy E a = 0.9 ± 0.05 eV. For the electron conductivity (220–273 K) induced by thermolysis and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6ac3e2c33f289f7d7f301830b19452
https://doi.org/10.1007/s00339-016-0039-2
https://doi.org/10.1007/s00339-016-0039-2
Publikováno v:
Semiconductors. 46:478-483
Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b4bc963d172216cf012f4a2cbba480
https://doi.org/10.1134/s1063782612040148
https://doi.org/10.1134/s1063782612040148
Publikováno v:
Physics of the Solid State. 48:1280-1283
The density and porosity of synthetic opals with spheres 315 and 1000 nm in diameter were measured in relation to the annealing temperature. At annealing temperatures of up to 500°C, the seeming density and porosity remain almost unchanged. Then, at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5870e30a881ee50f47502b400543a64
https://doi.org/10.1134/s1063783406070109
https://doi.org/10.1134/s1063783406070109