Zobrazeno 1 - 10
of 81
pro vyhledávání: '"A. D. Katnani"'
Publikováno v:
EDFA Technical Articles. 19:22-30
This article provides an overview of atom probe tomography (APT) and its use in semiconductor FA and new product development. It discusses the basic components in an atom probe, the making of APT tips, and the general approach for data collection and
Autor:
Krishna Gandi Sachdev, Harbans S. Sachdev, Ahmad D. Katnani, Ranee Wai-Ling Kwong, Wu-Song Huang
Publikováno v:
Microelectronic Engineering. 27:393-396
A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl
Autor:
Kim Y. Lee, Wu-Song Huang, Mahmoud Khojasteh, R. Sooriyakumaran, Mark D. Denison, Dominic Changwon Yang, James F. Cameron, Roger F. Sinta, George W. Orsula, George Joseph Hefferon, Ahmad D. Katnani, Rao Bantu, Ranee Kwong, Jim Thackeray, Bill Brunsvold
Publikováno v:
Journal of Photopolymer Science and Technology. 8:525-534
An environmentally stable resist with high contrast, sensitivity and resolution is presented. Delay stability in excess of 24hr. has been achieved with insignificant change in linewidth. The resist also demonstrates extreme insensitivity to PEB, show
Autor:
Helen Kim, Yun Tao Jiang, Susan Ng, Boris Sherman, Cornel Bozdog, Chas Archie, Alok Vaid, Ahmad D. Katnani, Mark Kelling, Narender Rana, Igor Turovets, Bin Bin Yan, Ronen Urensky, Peter Ebersbach, Matthew Sendelbach, Boaz Brill, John Allgair, Carsten Hartig, Erin Mclellan, Michael Sendler
Publikováno v:
SPIE Proceedings.
Shrinking design rules and reduced process tolerances require tight control of CD linewidth, feature shape, and profile of the printed geometry. The Holistic Metrology approach consists of utilizing all available information from different sources li
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2400-2403
The surface topography of gold electroplated as a function of current density has been studied by two topographical imaging techniques. Scanning tunneling microscopy (STM) was used to extend the magnification regime of scanning electron microscopy (S
Publikováno v:
Thin Solid Films. 204:265-274
Cermet, e.g. Cr-Si-O, thin films are widely used in the electronics industry as high precision resistors. The film resistance depends on several parameters such as the degree of crystallinity and surface oxidation. Therefore, proper annealing steps a
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1426-1433
The advancements in electron optics have made it possible to cover a wide electron energy range without significant degradation in the imaging quality of a scanning electron microscope. The secondary electron emission and the surface sensitivity are
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2363-2365
Chloride residues, elevated temperature, and humidity affect circuit line adhesion to dielectric material in electronic packaging. Effects of the above parameters on the polyimide (PI)/metal interface are discussed. Scrupulously cleaned, and HCl dope
Autor:
Gregory Breyta, P. J. Brock, Ahmad D. Katnani, Pushkara Rao Varanasi, Hiroshi Ito, William R. Brunsvold
Publikováno v:
ACS Symposium Series ISBN: 9780841235816
Micro-and Nanopatterning Polymers
Micro-and Nanopatterning Polymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de32e22a5aedfff7ffbaffaba5e130a9
https://doi.org/10.1021/bk-1998-0706.ch024
https://doi.org/10.1021/bk-1998-0706.ch024
Autor:
Ronald W. Nunes, Dominic Changwon Yang, James F. Cameron, George W. Orsula, Rao Bantu, Tsuyoshi Shibata, Mahmoud Khojasteh, Ahmad D. Katnani, Roger F. Sinta, Kim Y. Lee, William R. Brunsvold, Steven J. Holmes, Wu-Song Huang, Ranee Kwong
Publikováno v:
ACS Symposium Series ISBN: 9780841235816
Micro-and Nanopatterning Polymers
Micro-and Nanopatterning Polymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5691623847d8d0ee3c123c701675464c
https://doi.org/10.1021/bk-1998-0706.ch008
https://doi.org/10.1021/bk-1998-0706.ch008