Zobrazeno 1 - 10
of 118
pro vyhledávání: '"A. D. Izotov"'
Autor:
Mikhail G. Vasil’ev, Anton M. Vasil’ev, Alexander D. Izotov, Yuriy O. Kostin, Alexey A. Shelyakin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 3 (2021)
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors. The production of such chips is impossible without a thorough technological study
Externí odkaz:
https://doaj.org/article/a39d088f630d4faca70a8fe215c8d5b3
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 3 (2021)
The structure and chemical composition of grain boundaries in GaSb magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries
Externí odkaz:
https://doaj.org/article/3a762eb649364d44a473e0303c0a9744
Autor:
Muhammadyusuf Jaloliddinzoda, Sergey F. Marenkin, Alexey I. Ril’, Mikhail G. Vasil’ev, Alexander D. Izotov, Denis E. Korkin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 3 (2021)
High-temperature ferromagnets are widely used on a practical level. Based on them, magnetic memory for computers and various types of magnetic field sensors are created. Therefore, bulk ingots and thin-film samples of ferromagnet manganese antimonide
Externí odkaz:
https://doaj.org/article/cf0e1c34d0a4445bad6c94ba32978622
Autor:
Mikhail G. Vasil’ev, Anton M. Vasil’ev, Alexander D. Izotov, Yuriy O. Kostin, Alexey A. Shelyakin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 2 (2021)
The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser d
Externí odkaz:
https://doaj.org/article/bba591f4a99744f2ac4d1b765ea20535
Growth of an InP/GaInAsP Heterostructure on a Shaped InP Substrate for Laser Diode-Based CO2 Sensing
Publikováno v:
Inorganic Materials. 58:785-791
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48af14a6a1eb84faac4a779508328ca9
https://doi.org/10.1134/s0020168522080131
https://doi.org/10.1134/s0020168522080131
Publikováno v:
Radioelectronics. Nanosystems. Information Technologies. 12:341-348
When doping gallium antimonide with 2 at.% Mn, it was found that, as a result of quenching of the melt, manganese segregates on grain-forming dislocations of the crystalline GaSb (111) texture in the form of microinclusions based on the ferromagnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9719370d5b8aa7b6f163a2b6e1b8e1
https://doi.org/10.17725/rensit.2020.12.341
https://doi.org/10.17725/rensit.2020.12.341
Publikováno v:
Inorganic Materials: Applied Research. 11:1071-1077
Comprehensive physical and technological studies on the creation of mesastripe structures with a channel in the substrate and subsequent burying of the structure with a layer of zinc selenide are carry out. Planarity of heterointerfaces between the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65d62772ffe67d0a94a04c83abc400af
https://doi.org/10.1134/s2075113320050342
https://doi.org/10.1134/s2075113320050342
Autor:
A. D. Izotov, V. R. Bilynskyi-Slotylo, T. O. Manyk, I. V. Fedorchenko, O. N. Manyk, A. A. Ashcheulov
Publikováno v:
Russian Journal of Inorganic Chemistry. 65:1360-1365
A complex approach to the short-range ordering in molten binary cadmium and zinc antimonides has been proposed which considers specific features of the fine structure of chemical bond and interatomic interaction in АIIВV semiconductors. A procedure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d92b9e9698491b7e19ac2a9a433219e2
https://doi.org/10.1134/s0036023620090028
https://doi.org/10.1134/s0036023620090028
Publikováno v:
Radioelectronics. Nanosystems. Information Technologies. 11:279-290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5cd6638525a12e7c75f812ea4c71f5
https://doi.org/10.17725/rensit.2019.11.279
https://doi.org/10.17725/rensit.2019.11.279
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 3 (2021)
The structure and chemical composition of grain boundaries in GaSb magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e430f87fdaf5f255c2430fd2d671ffb5
https://journals.vsu.ru/kcmf/article/view/3533
https://journals.vsu.ru/kcmf/article/view/3533