Zobrazeno 1 - 2
of 2
pro vyhledávání: '"A. D. Hurbo"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 59-66 (2020)
The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that
Externí odkaz:
https://doaj.org/article/36f1caca2f9b4d0684640fbc9309b7a2
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 31-37 (2019)
Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density
Externí odkaz:
https://doaj.org/article/f57ed8ab0de04d67bce82e4b70b5a54e