Analysis of structural, morphological and magnetic properties of diluted magnetic semiconductor ZnO:Eu obtained by combustion reaction

Autor: Ramon Alves Torquato, D. B. Maia, Tibério Andrade dos Passos, R. A. Raimundo

Publikováno v: Cerâmica v.66 n.379 2020
Cerâmica (São Paulo. Online)
Universidade de São Paulo (USP)
instacron:USP
Cerâmica, Volume: 66, Issue: 379, Pages: 262-268, Published: 17 JUL 2020
Cerâmica, Vol 66, Iss 379, Pp 262-268 (2020)

Eu-doped semiconductor matrix of ZnO at concentrations of 0.05 and 0.10 mols was synthesized by combustion reaction, using zinc nitrate, europium nitrate, and urea as fuel. In order to analyze the effect of europium concentration and sintering on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ddd0346b860e1e985786468a06f51f6
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0366-69132020000300262

Selective area grown AlGaInAs multi-quantum wells characterization and modeling for photonic integrated devices

Autor: N. Lagay, Jean Decobert, Fernando Rinaldi, A. D. B. Maia, Guillaume Binet, Pierre-Yves Lagrée

Publikováno v: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

The use of industrial micro x-ray diffraction (μ-XRD) allows us to access composition and thickness of multiple quantum well (MQW) made by selective area growth (SAG). To make high performance photonic integrated circuit (PIC), a precise design of d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10c7d0c892a86a60a2fc6cd8d5f27ec3
https://doi.org/10.1109/iciprm.2016.7528579

Efeitos de spin em poços quânticos largos

Autor: A. D. B. Maia

Publikováno v: Biblioteca Digital de Teses e Dissertações da USP
Universidade de São Paulo (USP)
instacron:USP

Este trabalho apresenta o resultado de investigações sobre efeitos de spin em amostras de poços quânticos simples e duplos de AlGaAs, crescidos em substratos de GaAs por MBE - Molecular Beam Epitaxy. O estudo se concentra na variação do fator g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c9fbe93de3c345fd73d1ce3c3197e63
https://doi.org/10.11606/d.43.2007.tde-25082009-080807

Dark current noise and noise gain in quantum-well infrared photodetectors

Autor: R. M. S. Kawabata, Mauricio P. Pires, Anibal Thiago Bezerra, B. P. Figueroa, A. D. B. Maia, Patricia L. Souza

Publikováno v: 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).

Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36bcf11e4d9df730a0aecd7c80cb2142
https://doi.org/10.1109/sbmicro.2014.6940112

Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states

Autor: Dmitri R. Yakovlev, André Bohomoletz Henriques, A. A. Quivy, Manfred Bayer, A. Schwan, A. D. B. Maia, S. Varwig

Publikováno v: Physical Review B. 86

Spin coherence generation in an ensemble of negatively charged (In,Ga)As/GaAs quantum dots was investigated by picosecond time-resolved pump-probe spectroscopy measuring ellipticity. Robust coherence of the ground-state electron spins is generated by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11b58bdc98c7a16a1c98c53532cf55c2
https://doi.org/10.1103/physrevb.86.115333