Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. D. Akhsakhaljan"'
Autor:
Andreas Sewing, Sergey V. Gaponov, S. Voellmar, Nikolai N. Salashchenko, Andre A. Gorbunov, A. D. Akhsakhaljan, Reiner Dietsch, Wolfgang Pompe, Hermann Mai
Publikováno v:
Scopus-Elsevier
A high vacuum pulsed laser deposition system is described where an intersection of two ablation plumes from twinned simultaneously irradiated targets is used. This system allows thin film and multilayer deposition of a wide variety of materials (incl
Autor:
Yuriy Ya. Platonov, S. I. Shinkarev, S. A. Zuev, Nicolay I. Polushkin, E. A. Shamov, S.S. Andreev, Nikolai N. Salashchenko, Sergey V. Gaponov, A. D. Akhsakhaljan
Publikováno v:
SPIE Proceedings.
Deposition possibility of small d-spacing (d equals 0.7 - 3 nm) multilayers on the basis of the material combinations W/Sb, W/Sc, Cr/Sc, Fe/Sc and their utilization as dispersive and focusing elements for the photon energy range E > 0.3 kev have been
Autor:
A. D. Akhsakhaljan
Publikováno v:
International Conference on Millimeter and Submillimeter Waves and Applications 1994.
Autor:
A. D. Akhsakhaljan
Publikováno v:
International Conference on Millimeter and Submillimeter Waves and Applications 1994.
A Fourier transform infrared (FF-IR) spectrometer was successfully employed to monitor in real-time the fabrication of thin film integrated circuits. The instrument simultaneously measured film thickness and doping levels of cpitaxial silicon films..