Evolution of the structure and hydrogen configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

Autor: C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e

Publikováno v: Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III), pp. 29–30, Firenze, 14-18 May 2012
info:cnr-pdr/source/autori:C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e/congresso_nome:Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III)/congresso_luogo:Firenze/congresso_data:14-18 May 2012/anno:2012/pagina_da:29/pagina_a:30/intervallo_pagine:29–30

Hydrogen is the element of choice to passivate dangling bonds in amorphous and crystalline semiconductors, like Si, Ge and SiGe because of its single-electron atomic structure. By hydrogenation better electro-optical characteristics are obtained. Hyd

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::81854170aec3df3cbe6cb1bb8de74d24
http://www.cnr.it/prodotto/i/198198