Zobrazeno 1 - 10
of 96
pro vyhledávání: '"A. Csóré"'
Publikováno v:
In Computerized Medical Imaging and Graphics July 2024 115
Divacancy in its neutral charge state (V$_\text{C}$V$_\text{Si}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V$_\text{C}$V$_\text{Si}$ configurations can be formed
Externí odkaz:
http://arxiv.org/abs/2107.01971
Publikováno v:
Phys. Rev. B 104, 035207 (2021)
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be optically man
Externí odkaz:
http://arxiv.org/abs/2104.04292
Autor:
Csore, Judit, Drake, Madeline, Karmonik, Christof, Benfor, Bright, Osztrogonacz, Peter, Lumsden, Alan B., Roy, Trisha L.
Publikováno v:
In Journal of Vascular Surgery August 2024
Publikováno v:
In JVS-Vascular Insights 2024 2
Autor:
Csóré, András, Gali, Adam
Publikováno v:
Phys. Rev. B 102, 241201 (2020)
Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon coupling in these defects may highly influence their interaction with externa
Externí odkaz:
http://arxiv.org/abs/1909.11587
Autor:
Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. Ul, Son, N. T., Fromherz, T., Gali, A., Trupke, M.
Publikováno v:
Phys. Rev. Applied 12, 014015 (2019)
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and
Externí odkaz:
http://arxiv.org/abs/1901.05371
Autor:
Magnusson, Björn, Son, Nguyen Tien, Csóré, András, Gällström, Andreas, Ohshima, Takeshi, Gali, Adam, Ivanov, Ivan G.
Publikováno v:
Phys. Rev. B 98, 195202 (2018)
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds)
Externí odkaz:
http://arxiv.org/abs/1804.01167
Publikováno v:
Phys. Rev. B 96, 085204 (2017)
Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in the recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect in diamond with visible emission but alt
Externí odkaz:
http://arxiv.org/abs/1705.06229
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