Zobrazeno 1 - 10
of 53
pro vyhledávání: '"A. Contolatis"'
Autor:
Vladimir Sokolov, A. Contolatis, D. Carlson, M. Vickerberg, J. Geddes, J.P. Mondal, S. Bounnak, C. Anderson, R.C. Becker
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1388-1396
An MMIC transmitter for high-volume smart munition applications in Ka band is developed using 0.25 mu m MESFET technology. The transmitter, consisting of a voltage-controlled oscillator (VCO) and power amplifier (PA), delivers more than 100 mW of pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b0918fbaf26af14cac84298b4e76ba
https://doi.org/10.1109/4.156442
https://doi.org/10.1109/4.156442
Publikováno v:
MTT-S International Microwave Symposium Digest.
Submicron gate length, 300 micron gate width GaAs FETs were fabricated on MBE material using direct write e-beam lithography. Evaluation of the devices in a Ka-band test fixture with fin line transitions resulted in an amplifier output power of 110 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c0101d081512e0d8b43aecb95277d2
https://doi.org/10.1109/mwsym.1984.1131704
https://doi.org/10.1109/mwsym.1984.1131704
Publikováno v:
MTT-S International Microwave Symposium Digest.
Millimeter wave planar Schottky barrier mixer diodes with beam leads, low parasitic and one micron fingers have been developed for 35 GHz, 95 GHz and 140 GHz operation. Preliminary characterization of dual-finger mixer diodes has resulted in a double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38d98d343d7a55cf4d38767c4634137
https://doi.org/10.1109/mwsym.1981.1129915
https://doi.org/10.1109/mwsym.1981.1129915
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 94 GHz GaAs monolithic balanced mixer in a planar microstrip integrated circuit configuration has been demonstrated. A double sideband noise figure of 5.6 dB has been achieved at 94.5 GHz. This includes a 1.5 dB noise contribution of the IF preampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db5c90ecd526aecda128f0d8e5f662d
https://doi.org/10.1109/mwsym.1984.1131683
https://doi.org/10.1109/mwsym.1984.1131683
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188f9e1b932d572cdb280d4005c78942
https://doi.org/10.1109/mcs.1987.1114519
https://doi.org/10.1109/mcs.1987.1114519
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
The design and performance of a GaAs monolithic 180 degrees one-bit phase shifter test circuit for Ka-band operation is presented. Over the 27.5 to 30 GHz band the measured differential phase shift is within 10 degrees of the ideal characteristic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::794ffe70af46e09c0db8802cfdc1f4ec
https://doi.org/10.1109/mcs.1983.1151039
https://doi.org/10.1109/mcs.1983.1151039
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04115932efb612ba1833a2d1a892c38
https://doi.org/10.1109/mcs.1985.1113627
https://doi.org/10.1109/mcs.1985.1113627
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A millimeter wave monolithic GaAs balanced mixer integrated circuit using a pair of planar Schottky barrier diodes with RF matching elements on a semi-insulating GaAs substrate has been developed for 94 GHz receiver applications. The GaAs chip is use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f33e2dfe0532c28707312981515bad3
https://doi.org/10.1109/mcs.1983.1151041
https://doi.org/10.1109/mcs.1983.1151041
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fe84545d9c2c1c3beb4f287701e7c4
https://doi.org/10.1109/mcs.1984.1113607
https://doi.org/10.1109/mcs.1984.1113607
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a9d6213d6ca1a22b6c33e308a2892f
https://doi.org/10.1109/mcs.1984.1113611
https://doi.org/10.1109/mcs.1984.1113611