Zobrazeno 1 - 10
of 1 662
pro vyhledávání: '"A. Caymax"'
Autor:
Han, Han, Hantschel, Thomas, Strakos, Libor, Vystavel, Tomas, Baryshnikova, Marina, Mols, Yves, Kunert, Bernardette, Langer, Robert, Vandervorst, Wilfried, Caymax, Matty
Publikováno v:
In Ultramicroscopy March 2020 210
Autor:
Han, Han, Hantschel, Thomas, Schulze, Andreas, Strakos, Libor, Vystavel, Tomas, Loo, Roger, Kunert, Bernardette, Langer, Robert, Vandervorst, Wilfried, Caymax, Matty
Publikováno v:
In Ultramicroscopy March 2020 210
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of
Externí odkaz:
http://arxiv.org/abs/0904.2617
Autor:
Brammertz, Guy, Mols, Yves, Degroote, Stefan, Leys, Maarten, Van Steenbergen, Jan, Borghs, Gustaaf, Caymax, Matty
Publikováno v:
Journal of Crystal Growth, Volume 297, Issue 1, 15 December 2006, Pages 204-210
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the stand
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703662
Autor:
Brammertz, G., Caymax, M., Mols, Y., Degroote, S., Leys, M., Van Steenbergen, J., Winderickx, G., Borghs, G., Meuris, M.
Publikováno v:
Proceedings of the 210th Meeting of The Electrochemical Society, Cancun, Mexico, October 29-November 3, 2006
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selec
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703664
Autor:
Brammertz, Guy, Mols, Yves, Degroote, Stefan, Motsnyi, Vasyl, Leys, Maarten, Borghs, Gustaaf, Caymax, Matty
Publikováno v:
J. Appl. Phys. 99, 093514, 2006
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL)
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703661
Autor:
Gencarelli, F., Shimura, Y., Kumar, A., Vincent, B., Moussa, A., Vanhaeren, D., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Loo, R., Heyns, M.
Publikováno v:
In Thin Solid Films 1 September 2015 590:163-169
Autor:
Jayachandran, Suseendran, Delabie, Annelies, Billen, Arne, Dekkers, Harold, Douhard, Bastien, Conard, Thierry, Meersschaut, Johan, Caymax, Matty, Vandervorst, Wilfried, Heyns, Marc
Publikováno v:
In Applied Surface Science 1 January 2015 324:251-257
Autor:
Jayachandran, Suseendran, Delabie, Annelies, Maggen, Jens, Caymax, Matty, Loo, Roger, Meersschaut, Johan, Lenka, Haraprasanna, Vandervorst, Wilfried, Heyns, Marc
Publikováno v:
In Thin Solid Films 30 April 2014 557:36-41
Autor:
Sioncke, S., Vanherle, W., Art, W., Ceuppens, J., Ivanov, Ts., Lin, D., Nyns, L., Delabie, A., Conard, T., Struyf, H., De Gendt, S., Caymax, M., Collaert, N., Thean, A.
Publikováno v:
In Microelectronic Engineering September 2013 109:46-49