Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A. C. Mofor"'
Autor:
E. Schlenker, A. C. Mofor, Peter Hinze, Arne Behrends, Andreas Waag, Andrey Bakin, Th. Weimann
Publikováno v:
Microelectronic Engineering. 85:1248-1252
Zinc oxide (ZnO) nanorods grown by vapor transport were contacted individually with Ti/Au electrodes structured by e-beam lithography. The rectifying behaviour observed in the current-voltage characteristics is likely caused by an interfacial insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f17e484b2af70220163304a62471ff16
https://doi.org/10.1016/j.mee.2008.01.032
https://doi.org/10.1016/j.mee.2008.01.032
Publikováno v:
Thin Solid Films. 516:1401-1404
We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 °C. Ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7c5a0f99c046b314f0bf9aba16caec
https://doi.org/10.1016/j.tsf.2007.05.045
https://doi.org/10.1016/j.tsf.2007.05.045
Autor:
Andreas Waag, A. C. Mofor, Joseph Kioseoglou, Andrey Bakin, Béla Pécz, Abdelhamid El-Shaer, J. Stoemenos
Publikováno v:
Journal of Crystal Growth. 308:314-320
The quality of the ZnO films, epitaxially grown on sapphire, can be substantially improved when a MgO buffer layer is used. The role and the structural characteristics of this buffer layer were studied by transmission electron microscopy. It was foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f931636b403e3a8c2928448747eb6b
https://doi.org/10.1016/j.jcrysgro.2007.08.012
https://doi.org/10.1016/j.jcrysgro.2007.08.012
Autor:
E. Schlenker, G. Wagner, A. C. Mofor, Abdelhamid El-Shaer, S.A. Reshanov, Andrey Bakin, Andreas Waag
Publikováno v:
Superlattices and Microstructures. 42:387-391
We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reacto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262f256e7152c0ec1fa719f5644cb903
https://doi.org/10.1016/j.spmi.2007.04.078
https://doi.org/10.1016/j.spmi.2007.04.078
Autor:
Bernard Piechal, Andrey Bakin, F. Donatini, Jinkyoung Yoo, Gyu-Chul Yi, Abdelhamid El-Shaer, Andreas Waag, A. C. Mofor, Le Si Dang
Publikováno v:
physica status solidi (b). 244:1458-1461
Optical properties of ZnO-based single nanorods are probed by cathodoluminescence (CL) measurements at T = 5 K. We observe a variation of the ZnO near band edge CL by three orders of magnitude along the nanorod axis, accompanied by a spectral blueshi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1812553c70b0ab4e400e92040e7ad49c
https://doi.org/10.1002/pssb.200675104
https://doi.org/10.1002/pssb.200675104
Autor:
Thomas Weimann, A. C. Mofor, E. Schlenker, Andreas Waag, Andrey Bakin, B. Postels, Hergo-H. Wehmann, Peter Hinze
Publikováno v:
physica status solidi (b). 244:1473-1477
Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef8774260470d7305f7afe1113afcab
https://doi.org/10.1002/pssb.200675111
https://doi.org/10.1002/pssb.200675111
Autor:
Andreas Waag, A. C. Mofor, Jürgen Christen, Frank Bertram, Abdelhamid El-Shaer, D. Fuhrmann, Andreas Hangleiter, Andrey Bakin
Publikováno v:
Applied Physics A. 88:17-20
The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2277b598e99351bd40fa7c971eb17eb
https://doi.org/10.1007/s00339-007-3961-5
https://doi.org/10.1007/s00339-007-3961-5
Autor:
A. Matiss, Werner Prost, A.-C. Mofor, V. Khorenko, A. Poloczek, Andrey Bakin, Andreas Schlachetzki, Franz-Josef Tegude, S. Neumann
Publikováno v:
Applied Physics A. 87:539-544
We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3879f03f63e1acb18123a05547694beb
https://doi.org/10.1007/s00339-007-3920-1
https://doi.org/10.1007/s00339-007-3920-1
Publikováno v:
physica status solidi c. 4:158-161
ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d349725bd5d875d96ff4761b143700c
https://doi.org/10.1002/pssc.200673557
https://doi.org/10.1002/pssc.200673557
Publikováno v:
Nanotechnology. 17:4859-4862
ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn0.85Mg0.15O heterostructures were grown on the nanorods using molecular b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81088c91b610c8c17e6726f4785b7826
https://doi.org/10.1088/0957-4484/17/19/013
https://doi.org/10.1088/0957-4484/17/19/013