III-V nanowire photovoltaics: Review of design for high efficiency

Autor: N. Tajik, A. C. E. Chia, N. Jewell, R. Yee, P Kuyanov, J P Boulanger, J. Zhang, K. M. A. Rahman, Ray R. LaPierre, Chris M. Haapamaki, S. J. Gibson

Publikováno v: physica status solidi (RRL) - Rapid Research Letters. 7:815-830

This article reviews recent developments in nanowire-based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire growth methods fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb96f34f421cd339fa943518a3b14f16
https://doi.org/10.1002/pssr.201307109

Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping

Autor: Luca Gregoratti, Silvia Rubini, Alfonso Franciosi, S. Ambrosini, Majid Kazemian Abyaneh, Matteo Amati, A. C. E. Chia, Mattia Fanetti, Ray R. LaPierre

Publikováno v: Journal of applied physics 114 (2013): 154308. doi:10.1063/1.4826198
info:cnr-pdr/source/autori:Fanetti, M.; Ambrosini, S.; Amati, M.; Gregoratti, L.; Abyaneh, M. K.; Franciosi, A.; Chia, A. C. E.; LaPierre, R. R.; Rubini, S./titolo:Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping/doi:10.1063%2F1.4826198/rivista:Journal of applied physics/anno:2013/pagina_da:154308/pagina_a:/intervallo_pagine:154308/volume:114

The control of the doping in nanowires (NWs) is of fundamental importance for the implementation of NW-based devices. A method is presented to obtain local information about doping by monitoring the Fermi-energy position within the bandgap at the sur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64738cb724da51d0743e19c64280ba8c
https://hdl.handle.net/11368/2759357

Electrical transport and optical model of GaAs-AlInP core-shell nanowires

Autor: Ray R. LaPierre, David Comedi, S. Zhao, Z. Mi, Y. Li, A. C. E. Chia, Mónica Tirado

Publikováno v: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET

GaAs nanowires were passivated by AlInP shells grown by the Au-assisted vapor-liquid-solid method in a gas source molecular beam epitaxy system. Transmission electron microscopy confirmed a core-shell GaAs-AlInP structure. Current-voltage measurement

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42e6d55e3de166f344945c7ff21c8352
https://aip.scitation.org/doi/10.1063/1.4716011

Multi-spectral optical absorption in substrate-free nanowire arrays

Autor: Ray R. LaPierre, A. C. E. Chia, J P Boulanger, Junpeng Zhang, Iman Khodadad, Simarjeet S. Saini, Navneet Dhindsa

Publikováno v: Applied Physics Letters. 105:123113

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire le

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43fe3afb02c9898a7f321b3086d12bde
https://doi.org/10.1063/1.4896772

Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties

Autor: A. C. E. Chia, Simarjeet S. Saini, Navneet Dhindsa, J P Boulanger, Ray R. LaPierre, Iman Khodadad

Publikováno v: Nanotechnology. 25:305303

We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8827ca8d3c1bb615e0215547e02758c2
https://doi.org/10.1088/0957-4484/25/30/305303