Zobrazeno 1 - 10
of 409
pro vyhledávání: '"A. C. Diebold"'
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7464a2b5226b875c4b494a90c83da549
https://doi.org/10.1117/12.2657690
https://doi.org/10.1117/12.2657690
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058201-058201-16 (2018)
The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental
Externí odkaz:
https://doaj.org/article/e12903099e9c43848e901fa8565569ab
Autor:
Maximilian Liehr, Jubin Hazra, Karsten Beckmann, Vineetha Mukundan, Ioannis Alexandrou, Timothy Yeow, Joseph Race, Kandabara Tapily, Steven Consiglio, Santosh K. Kurinec, Alain C. Diebold, Nathaniel Cady
Publikováno v:
Journal of Vacuum Science & Technology B. 41:012805
In this work, hafnium zirconium oxide (HZO)-based 100 × 100 nm2 ferroelectric tunnel junction (FTJ) devices were implemented on a 300 mm wafer platform, using a baseline 65 nm CMOS process technology. FTJs consisting of TiN/HZO/TiN were integrated i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9bb4ad801053acc579b048d008451a
https://doi.org/10.1116/6.0002097
https://doi.org/10.1116/6.0002097
Autor:
Vineetha Mukundan, Robert D. Clark, Steven Consiglio, Kandabara Tapily, Karsten Beckmann, Alain C. Diebold, Gert J. Leusink, Nathaniel C. Cady
Publikováno v:
MRS Advances. 4:545-551
The recent discovery of ferroelectric behavior in doped hafnia-based dielectrics, attributed to a non-centrosymmetric orthorhombic phase, has potential for use in attractive applications such as negative differential capacitance field-effect-transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e568d0fddcd46a1f6969befd359dbd24
https://doi.org/10.1557/adv.2019.148
https://doi.org/10.1557/adv.2019.148
Autor:
Dina H. Triyoso, K. Tapily, Gert J. Leusink, C. Mart, Steven Consiglio, Wenke Weinreich, C. S. Wajda, Robert D. Clark, Alain C. Diebold, Thomas Kampfe, Vineetha Mukundan
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Ferroelectric and antiferroelectric Hf/Zr-based oxide films have recently gained interest for memory and AI applications due to their promise of low power and CMOS compatibility. As Hf/Zr-based oxides are not ‘new’ materials, this paper will star
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622c5d683d95e1dfe9f675728d03d2da
https://doi.org/10.1109/vlsi-tsa51926.2021.9440135
https://doi.org/10.1109/vlsi-tsa51926.2021.9440135
Autor:
Madhulika Korde, G. Andrew Antonelli, Alain C. Diebold, Aelan Mosden, Nick Keller, Subhadeep Kal, Cheryl Alix
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Here, we report the measurement of the dielectric spacer etch process for nanowire and nanosheet FET processes. A previously described Nanowire Test Structure (NWTS) was used for this study.[1, 2, 3] This structure has alternating Si/Si1-xGex/…/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2e20545cee1b409799acf5cd6f52ea
https://doi.org/10.1117/12.2584751
https://doi.org/10.1117/12.2584751
Autor:
Nick Keller, Alain C. Diebold, Subhadeep Kal, Daniel F. Sunday, R. Joseph Kline, Aelan Mosden, Madhulika Korde, Cheryl Alix
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a892019fc4fafd6e34ad88755babf6
https://doi.org/10.1117/12.2553371
https://doi.org/10.1117/12.2553371
Autor:
Nathaniel C. Cady, Alain C. Diebold
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
As scaling becomes more challenging, new approaches to transistor design, new materials, and new devices are all being explored. Advanced transistor designs such as vertically stacked nanowire and nanosheet FETs (NW/NS FETs) provide a pathway to sub-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8d3c7f3e0ab52c5178b65355e0cf11
https://doi.org/10.1117/12.2554477
https://doi.org/10.1117/12.2554477
Autor:
Carl A. Ventrice, William G. Vandenberghe, Christopher R. Cormier, Tyler R. Mowll, Lee A. Walsh, Adam T. Barton, Alain C. Diebold, Ruoyu Yue, Avery Green, Moon J. Kim, Robert M. Wallace, Stephen McDonnell, Vincent LaBella, Christopher L. Hinkle, Westly Nolting, Jiyoung Kim, Ning Lu, Rafik Addou
Publikováno v:
ACS Nano
The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f1df37cb20ce0a20c5659694e0ce286
https://doi.org/10.1021/acsnano.8b03414
https://doi.org/10.1021/acsnano.8b03414
Autor:
P. H. Thiesen, Bastian Miller, Sebastian Funke, Alain C. Diebold, Christian Röling, Ursula Wurstbauer, Avery Green, Aleksandar Matković
Publikováno v:
Applied Surface Science. 421:435-439
Spectroscopic imaging ellipsometry (SIE) is used to localize and characterize flakes of conducting, semi-conducting and insulating 2D-materials. Although the research in the field of monolayers of 2D-materials increased the last years, it is still ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0eb8646332aeb22f700ee7f0560dab1
https://doi.org/10.1016/j.apsusc.2016.10.158
https://doi.org/10.1016/j.apsusc.2016.10.158