Výsledky vyhledávání

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Autor: A Bucamp, C Coinon, S Lepilliet, D Troadec, G Patriarche, M H Diallo, V Avramovic, K Haddadi, X Wallart, L Desplanque

Publikováno v: Nanotechnology
Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former cas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fd336c6bec4f58c1b786292763c7b18
https://pubmed.ncbi.nlm.nih.gov/34937011

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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Autor: David Troadec, Alexandre Bucamp, Sylvie Lepilliet, C. Coinon, Ludovic Desplanque, Xavier Wallart, Gilles Patriarche

Publikováno v: Nano Research
Nano Research, Springer, 2020, 13, pp.61-66. ⟨10.1007/s12274-019-2572-8⟩
Nano Research, 2020, 13 (1), pp.61-66. ⟨10.1007/s12274-019-2572-8⟩

Three-dimensional (3D) nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport. In this context, III-V semiconductor-based nanowires with low electron effe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edc73db3bf4799417f96bf03692a7b70
https://hal.archives-ouvertes.fr/hal-02974920

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Dissertation/ Thesis

Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires

Autor: Bucamp, Alexandre

Que ce soit pour la fabrication de transistors ultimes fonctionnant à haute fréquence et faible consommation d’énergie ou pour celle de composants quantiques exploitant le transport balistique d’électrons, l’élaboration de nanostructures d

Externí odkaz: http://www.theses.fr/2019LIL1I067/document

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Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates

Autor: Ludovic Desplanque, A. Bucamp, Xavier Wallart, Gilles Patriarche, David Troadec

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 512, pp.6-10. ⟨10.1016/j.jcrysgro.2019.02.012⟩
Journal of Crystal Growth, 2019, 512, pp.6-10. ⟨10.1016/j.jcrysgro.2019.02.012⟩

The selective molecular beam epitaxy of InSb inside nanoscale apertures realized in a SiO2 mask deposited on a highly mismatched substrate is studied. The substrate of interest is GaAs on which a 6.1 A material (InAs or AlGaSb) has been grown accommo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9394ffc9e299b0a78a7314888fef0769
https://hal.archives-ouvertes.fr/hal-02392434/file/S002202481930082X.pdf

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Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Autor: T.A. Karatsori, David Troadec, M Fahed, N. Wichmann, Xavier Wallart, Alexandre Bucamp, Gerard Ghibaudo, A. Olivier, Sylvain Bollaert, Ludovic Desplanque, Ahmed Addad, M. Pastorek, Y. Lechaux

Publikováno v: Nanotechnology
Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩
Nanotechnology, Institute of Physics, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩

International audience; In this paper we report on the fabrication and electrical characterization of InAs-on-nothing metal-oxide-semiconductor field-effect transistor composed of a suspended InAs channel and raised InAs n+ contacts. This architectur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b0c9f711aa2f29d1bcabd835a8e8d17
https://hal.science/hal-01955057

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In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

Autor: David Troadec, Gilles Patriarche, A. Bucamp, Xavier Wallart, Ludovic Desplanque

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2018, 29 (30), ⟨10.1088/1361-6528/aac321⟩
Nanotechnology, 2018, 29 (30), ⟨10.1088/1361-6528/aac321⟩

In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9069e84245c180d85044accf95be0c82
https://hal.archives-ouvertes.fr/hal-01919495

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