Zobrazeno 1 - 10
of 44
pro vyhledávání: '"A. Botcharev"'
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:565-569
We report systematic characterizations of flicker noise in GaN based MODFETs. Flicker noise was measured across the channel of the devices from room temperature to 130 K. The voltage noise power spectra, SV(f) were found to be proportional to 1/fγ,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555ba60d498ae9ea0c0e3ace0ab8134b
https://doi.org/10.1557/s1092578300003057
https://doi.org/10.1557/s1092578300003057
Publikováno v:
Physical Review B. 56:9539-9544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::702399203c81b75a5428a5bc57acfc93
https://doi.org/10.1103/physrevb.56.9539
https://doi.org/10.1103/physrevb.56.9539
Publikováno v:
Physical Review B. 53:9838-9846
Transient subpicosecond Raman spectroscopy has been used to study electron velocity overshoot as well as nonequilibrium phonons in a GaAs-based p-i-n nanostructure under the application of high electric fields. Both electron distribution functions an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d44409f2f878d32feef1c86f9bffccd6
https://doi.org/10.1103/physrevb.53.9838
https://doi.org/10.1103/physrevb.53.9838
Autor:
Kong-Thon Tsen, Arnel Salvador, E. D. Grann, Otto F. Sankey, Hadis Morkoç, S. E. Günçer, David K. Ferry, S. J. Sheih, A. Botcharev
Publikováno v:
Physical Review B. 51:1631-1641
High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7ffb8c9e615640fac5374acc0ad60db
https://doi.org/10.1103/physrevb.51.1631
https://doi.org/10.1103/physrevb.51.1631
Autor:
Selim E. Günçer, H. Morkof, E. D. Grann, S. J. Sheih, David K. Ferry, A. Botcharev, Kong-Thon Tsen, A. Salvador
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:1093-1099
Electron transport in an Al/sub x/Ga/sub 1-x/As (x=0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T=80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0824aa5c9a34ad12776f2787816fa6fc
https://doi.org/10.1109/2944.488686
https://doi.org/10.1109/2944.488686
Publikováno v:
Journal of Applied Physics. 81:406-408
We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p–i–n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c121caa469d96eecb70c060f47cf824
https://doi.org/10.1063/1.364072
https://doi.org/10.1063/1.364072
Publikováno v:
Journal of Applied Physics; 1/1/1997, Vol. 81 Issue 1, p406, 3p, 3 Graphs
Autor:
Hadis Morkoç, Kong-Thon Tsen, A. Botcharev, David K. Ferry, Arnel Salvador, E. D. Grann, Otto F. Sankey
Publikováno v:
Applied Physics Letters. 67:1760-1762
We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs‐based p‐i‐n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be15d467dd0a55965b04ab0bbffcbfd
https://doi.org/10.1063/1.115041
https://doi.org/10.1063/1.115041
Autor:
S. J. Sheih, Selim E. Günçer, Chih Ta Chia, A. Botcharev, Kong-Thon Tsen, E. D. Grann, Hadis Morkoç, Ravi Droopad, Arnel Salvador, David K. Ferry, Otto F. Sankey, George N. Maracas
Publikováno v:
Applied Physics Letters. 64:1230-1232
Electron transport in GaAs‐based p‐i‐n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d6985179bdea600e4a0b0f37245f7f
https://doi.org/10.1063/1.110848
https://doi.org/10.1063/1.110848
Publikováno v:
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368).
Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S/sub V/(f), were found to be proportional to 1/f/sup /spl gamma// where /spl gamma/ depends on the device temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b9a725caeac7c3ef57d2ec988eefd3
https://doi.org/10.1109/hkedm.1998.740193
https://doi.org/10.1109/hkedm.1998.740193