Zobrazeno 1 - 10
of 85
pro vyhledávání: '"A. Bonfiglietti"'
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
Autor:
Bonfiglietti, A., Cuscunà, M., Rapisarda, M., Pecora, A., Mariucci, L., Fortunato, G., Caligiore, C., Fontana, E., Leonardi, S., Tramontana, F.
Publikováno v:
In Thin Solid Films 2007 515(19):7433-7436
Autor:
Pecora, A., Maiolo, L., Bonfiglietti, A., Cuscunà, M., Mecarini, F., Mariucci, L., Fortunato, G., Young, N.D.
Publikováno v:
In Microelectronics Reliability 2005 45(5):879-882
Autor:
Cuscunà, M, Bonfiglietti, A, Carluccio, R, Mariucci, L, Mecarini, F, Pecora, A, Stanizzi, M, Valletta, A, Fortunato, G
Publikováno v:
In Solid State Electronics 2002 46(9):1351-1358
Autor:
Valletta, A., Bonfiglietti, A., Rapisarda, M., Mariucci, L., Fortunato, G., Brotherton, S. D.
Publikováno v:
Journal of Applied Physics; 5/1/2007, Vol. 101 Issue 9, p094502, 11p, 1 Diagram, 2 Charts, 14 Graphs
Publikováno v:
Journal of Applied Physics; 8/1/2005, Vol. 98 Issue 3, p033702, 9p, 2 Black and White Photographs, 5 Charts, 8 Graphs
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p104515-1-104515-7, 7p, 9 Graphs
Autor:
S.D. Brotherton, Antonio Valletta, Matteo Rapisarda, Luigi Mariucci, Guglielmo Fortunato, A. Bonfiglietti, Alessandro Pecora
Publikováno v:
ECS Transactions. 8:211-216
An unambiguous characterisation of the polycrystalline-Si grain boundary behaviour has been obtained by studying thin film transistors, TFTs, realized on sequentially lateral solidified, SLS, material. The grain boundary, GB, carrier trapping has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484d1c4ef96aeb7ac3865ef79b93341b
https://doi.org/10.1149/1.2767310
https://doi.org/10.1149/1.2767310
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
Autor:
Luigi Mariucci, F. Tramontana, Claudia Caligiore, E. Fontana, Guglielmo Fortunato, Matteo Rapisarda, A. Pecora, Salvatore Leonardi, A. Bonfiglietti, M. Cuscunà
Publikováno v:
Thin Solid Films. 515:7433-7436
We present, for the first time, the application of the asymmetric fingered thin film transistor (AF-TFT) architecture to self-aligned p-channel TFTs for kink effect suppression. In AF-TFT the transistor channel region is split into two zones with dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b671c5b2b76e367aa883aaad462eaf1
https://doi.org/10.1016/j.tsf.2006.11.093
https://doi.org/10.1016/j.tsf.2006.11.093
Autor:
A. Bonfiglietti, Luca Maiolo, M. Cuscunà, Alessandro Pecora, A. di Gaspare, Luigi Mariucci, Guglielmo Fortunato, G. Stracci
Publikováno v:
Journal of non-crystalline solids 352 (2006): 1723–1727. doi:10.1016/j.jnoncrysol.2005.10.050
info:cnr-pdr/source/autori:M. Cuscunà; G. Stracci; A. Bonfiglietti; A. di Gaspare; L. Maiolo; A. Pecora; L. Mariucci; G. Fortunato/titolo:Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors/doi:10.1016%2Fj.jnoncrysol.2005.10.050/rivista:Journal of non-crystalline solids/anno:2006/pagina_da:1723/pagina_a:1727/intervallo_pagine:1723–1727/volume:352
info:cnr-pdr/source/autori:M. Cuscunà; G. Stracci; A. Bonfiglietti; A. di Gaspare; L. Maiolo; A. Pecora; L. Mariucci; G. Fortunato/titolo:Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors/doi:10.1016%2Fj.jnoncrysol.2005.10.050/rivista:Journal of non-crystalline solids/anno:2006/pagina_da:1723/pagina_a:1727/intervallo_pagine:1723–1727/volume:352
In this work, we studied the effects of different thermal annealing on the electrical characteristics of non-self-aligned low-temperature p-channel polycrystalline silicon (polysilicon) thin film transistors. Different thermal treatments were perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f506f8cb187e3a9b242869e3a6d080c
https://doi.org/10.1016/j.jnoncrysol.2005.10.050
https://doi.org/10.1016/j.jnoncrysol.2005.10.050