Zobrazeno 1 - 10
of 32
pro vyhledávání: '"A. Birkan Selçuk"'
Autor:
A. Birkan Selçuk, Tankut Ates, Niyazi Bulut, Serhat Keser, Omer Kaygili, I.S. Yahia, Süleyman Köytepe
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:10443-10453
1.0 at% Ag-containing hydroxyapatites (HAps) doped with the different amounts of Gd (e.g., 0, 0.8, 1.6 and 2.4 at%) were synthesized by a wet chemical method and their dielectric properties were investigated before and after gamma irradiation. The ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad029cba4d04cc617231e38117d29a7a
https://doi.org/10.1007/s10854-019-01387-w
https://doi.org/10.1007/s10854-019-01387-w
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2008 594(3):395-399
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 400(1):149-154
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 400(1):168-174
Autor:
Birkan Selçuk, A.
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 396(1):181-186
Autor:
Birkan Selçuk, A., Bilge Ocak, S.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2007 577(3):719-723
In this study, low-frequency-dependent characteristics of Al/Maleic Anhydride (MA)/p-Si organic Schottky barrier diode have been investigated. Maleic Anhydride (MA) has been successfully coated on p type-Si substrate with 280 m thickness and 10 ohm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05fe17a9fced21cfd9a92e5cb073db15
https://avesis.gazi.edu.tr/publication/details/1deeed6a-4d75-4494-bda0-34542797c883/oai
https://avesis.gazi.edu.tr/publication/details/1deeed6a-4d75-4494-bda0-34542797c883/oai
The electrical properties PbO based MOS (metal-oxide semiconductor)-type different Schottky barrier diodes on an Al/PbO/p-Si structure have been investigated and done a comparisonin this study. Al/PbO/p-Si structures were fabricated and their current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f91074ef836b4fe1ddf2026d0f927ca
https://avesis.gazi.edu.tr/publication/details/a5f1c7e3-c9fb-411c-be39-2bd4532efe6e/oai
https://avesis.gazi.edu.tr/publication/details/a5f1c7e3-c9fb-411c-be39-2bd4532efe6e/oai
Autor:
A. Birkan Selçuk, N. Canan Gursoy, Omer Kaygili, Serhat Keser, Fahrettin Yakuphanoglu, Tankut Ates, Sergey V. Dorozhkin
Publikováno v:
Materials Science and Engineering: C. 47:333-338
Hydroxyapatite (HAp) samples doped with 0, 2 and 4 at.% of yttrium (Y) were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy attached with energy dispersive X-ray (EDX) spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd2b18910f426afa660f3ad12a1e967e
https://doi.org/10.1016/j.msec.2014.11.039
https://doi.org/10.1016/j.msec.2014.11.039
Publikováno v:
Physica B: Condensed Matter. 400:149-154
In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO2/p-Si metal–insulator–semiconductor (MIS) structures with thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aadb4e04a52a093abeab9b5e1bbd12e
https://doi.org/10.1016/j.physb.2007.06.031
https://doi.org/10.1016/j.physb.2007.06.031