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pro vyhledávání: '"A. Bessaudou"'
Akademický článek
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Autor:
Leroy, J., Dalmay, C., Landoulsi, A., Hjeij, F., Mélin, C., Bessette, B., Bounaix Morand du Puch, C., Giraud, S., Lautrette, C., Battu, S., Lalloué, F., Jauberteau, M.O., Bessaudou, A., Blondy, P., Pothier, A.
Publikováno v:
In Sensors & Actuators: A. Physical 15 June 2015 229:172-181
Autor:
Jauberteau, Isabelle, Mayet, Richard, Cornette, Julie, Bessaudou, Annie, Carles, Pierre, Jauberteau, Jean-Louis, Merle-Méjean, Thérèse
Publikováno v:
In Surface & Coatings Technology 25 May 2015 270:77-85
Autor:
Isabelle Jauberteau, Pierre Carles, Richard Mayet, Julie Cornette, Annie Bessaudou, Jean Louis Jauberteau
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095105-095105-13 (2018)
The diffusion of nitrogen into Ti silicide films allows the performance of complementary metal oxide semiconductor (CMOS) components to be improved. In this work, the thermochemical treatment is carried out in an expanding microwave plasma reactor us
Externí odkaz:
https://doaj.org/article/155a129abacc47bfa36727f3ed0ff065
Autor:
Zhang, L.Y., Bounaix Morand du Puch, C., Dalmay, C., Lacroix, A., Landoulsi, A., Leroy, J., Mélin, C., Lalloué, F., Battu, S., Lautrette, C., Giraud, S., Bessaudou, A., Blondy, P., Jauberteau, M.O., Pothier, A.
Publikováno v:
In Sensors & Actuators: A. Physical 1 September 2014 216:405-416
Publikováno v:
In Procedia Engineering 2014 87:504-507
Publikováno v:
In Thin Solid Films 1 May 2012 520(14):4823-4825
Autor:
Jauberteau, Isabelle, Merle-Méjean, Thérèse, Touimi, Saïd, Weber, Sylvain, Bessaudou, Annie, Passelergue, Armand, Jauberteau, Jean Louis, Aubreton, Jacques
Publikováno v:
In Surface & Coatings Technology 25 July 2011 205 Supplement 2:S271-S274
Publikováno v:
In Chemometrics and Intelligent Laboratory Systems 15 January 2008 90(1):25-30
Autor:
Alexandre Boulle, Jean-Christophe Orlianges, Aurelian Crunteanu, Georges Humbert, Annie Bessaudou
Publikováno v:
25th Opto-Electronics and Communications Conference (OECC 2020), October 4th to 8th, 2020, Taipei
25th Opto-Electronics and Communications Conference (OECC 2020), October 4th to 8th, 2020, Taipei, Oct 2020, Taipei, Taiwan
25th Opto-Electronics and Communications Conference (OECC 2020), October 4th to 8th, 2020, Taipei, Oct 2020, Taipei, Taiwan
We present our current researches on phase transition materials (vanadium dioxide, VO2) performing a thermally- or electrically-triggered metal-insulator transition and on chalcogenide amorphous-to-crystalline phase change materials like GeTe or Ge 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97db8115a8c18afc9812465b2ff3ee6b
https://hal.archives-ouvertes.fr/hal-03029538
https://hal.archives-ouvertes.fr/hal-03029538