Zobrazeno 1 - 10
of 69
pro vyhledávání: '"A. Bechlaghem"'
Autor:
Benmahieddine, Assia, Belyagoubi-Benhammou, Nabila, Belyagoubi, Larbi, El Zerey-Belaskri, Asma, Gismondi, Angelo, Di Marco, Gabriele, Canini, Antonella, Bechlaghem, Nadjat, Atik Bekkara, Fawzia, Djebli, Noureddine
Publikováno v:
In Biochemical Systematics and Ecology April 2021 95
Autor:
Zahra, Bechlaghem Fatima1 (AUTHOR) bechlaghem_f@yahoo.fr, Abedelkader, Hamdoune1 (AUTHOR) d_hamdoune@yahoo.fr
Publikováno v:
IETE Journal of Research. May2023, Vol. 69 Issue 5, p2664-2669. 6p.
Publikováno v:
In Results in Physics September 2018 10:650-654
Publikováno v:
Results in Physics, Vol 10, Iss , Pp 650-654 (2018)
Conversion efficiencies greater than 19% for thin-film solar cells based on (CIGS) cells with CdS buffer layers prepared by different methods are reported by several groups in recent years (Ramanathan et al., 2003, Contreras et al., 2005). However, t
Externí odkaz:
https://doaj.org/article/45fbf8af711f4899961274e4ff7e9258
Publikováno v:
Journal of Electrical and Electronics Engineering, Vol 10, Iss 2, Pp 9-12 (2017)
Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figur
Externí odkaz:
https://doaj.org/article/8aff98d8242e454dad5c87daa8c67328
Publikováno v:
IETE Journal of Research. :1-6
In this paper we simulate a high electron mobility transistor structure of two HEMTs, by sharing the drain, with the using Silvaco-Tcad software. Our two HEMTs AlGaN and InGaN, on H4-SiC substrate ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfedfcf629d042343de6580955f3f4da
https://doi.org/10.1080/03772063.2021.1904019
https://doi.org/10.1080/03772063.2021.1904019
Autor:
Chekroun-Bechlaghem, N.1 (AUTHOR), Belyagoubi-Benhammou, N.1 (AUTHOR) nabila.benhammou79@yahoo.fr, Belyagoubi, L.1 (AUTHOR), Gismondi, A.2 (AUTHOR), Nanni, V.2 (AUTHOR), Di Marco, G.2 (AUTHOR), Canuti, L.2 (AUTHOR), Canini, A.2 (AUTHOR), El Haci, I. A.3 (AUTHOR), Atik Bekkara, F.1 (AUTHOR)
Publikováno v:
Plant Biosystems. Dec2019, Vol. 153 Issue 6, p843-852. 10p.
Publikováno v:
Proceedings of 7th International Electronic Conference on Medicinal Chemistry.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::815bb78d733443b0c0a175fe109475a2
https://doi.org/10.3390/ecmc2021-11352
https://doi.org/10.3390/ecmc2021-11352
Autor:
Hamdoune A, Bechlaghem Fz
The objective of this paper is to simulate the effect of a BGaN back-barrier on performances of a high electron mobility transistor (HEMT) based on AlGaN/InGaN, by using TCAD 3D Silvaco simulator. We simulate some DC and AC characteristics; we note t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac2024219723d14c5e98fe69668b0f2
https://doi.org/10.21203/rs.3.rs-370364/v1
https://doi.org/10.21203/rs.3.rs-370364/v1
Autor:
Guellil Fatima Zohra, Chiboub Fellah Abdelghani, Aissa Bechlaghem, Rekrak Zakarya Anwar, Abdelbaki Cherifa
Publikováno v:
Euro-Mediterranean Journal for Environmental Integration. 6
This research mainly aims to analyse the overall operation of a wastewater treatment plant by establishing a monitoring system for the work of the plant equipment (e.g. aeration basin, sand separator, filter device, etc.) as well as the operating pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0866d7173eeff633e6c885a004d06e0b
https://doi.org/10.1007/s41207-021-00242-x
https://doi.org/10.1007/s41207-021-00242-x