Emission Engineering in Germanium Nanoresonators

Autor: Lamberto Duò, Xiaofei Wu, Michele Celebrano, Milena Baselli, Marco Finazzi, Giovanni Isella, Roman Sordan, Fabio Pezzoli, Bert Hecht, Andrea Farina, Monica Bollani, Daniel Chrastina, Alberto Tosi, Andrea Bahgat Shehata, Johann Osmond, Paolo Biagioni, Adriano Della Frera, Jacopo Frigerio

Publikováno v: ACS photonics 2 (2015): 53–59. doi:10.1021/ph500432k
info:cnr-pdr/source/autori:Celebrano, Michele; Baselli, Milena; Bollani, Monica; Frigerio, Jacopo; Shehata, Andrea Bahgat; Della Frera, Adriano; Tosi, Alberto; Farina, Andrea; Pezzoli, Fabio; Osmond, Johann; Wu, Xiaofei; Hecht, Bert; Sordan, Roman; Chrastina, Daniel; Isella, Giovanni; Duo, Lambert; Finazzi, Marco; Biagioni, Paolo/titolo:Emission Engineering in Germanium Nanoresonators/doi:10.1021%2Fph500432k/rivista:ACS photonics/anno:2015/pagina_da:53/pagina_a:59/intervallo_pagine:53–59/volume:2

We experimentally investigate the smallest germanium waveguide cavity resonators on silicon that can be designed to work around 1.55 mu m wavelength and observe an almost 30-fold enhancement in the collected spontaneous emission per unit volume when

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::680856986c2724325d9bb9d416d8c3ec
https://doi.org/10.1021/ph500432k

High-Q magnetic inductors for high efficiency on-chip power conversion

Autor: Maryam Massouras, Stephen M. Rossnagel, Bruce B. Doris, Naigang Wang, Andrea Bahgat Shehata, Lynne Gignac, Stephen L. Brown, Hariklia Deligianni, Eugene J. O' Sullivan, Lubomyr T. Romankiw, John A. Ott

Publikováno v: 2016 IEEE International Electron Devices Meeting (IEDM).

We experimentally demonstrate high performance magnetic inductors with Q as high as 17 in the frequency range of 50–250 MHz. These inductors meet target requirements for >90% efficient on-chip power converters. Physics-based models were used to und

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59d167a0bdfb3b489c70036121bb59d5
https://doi.org/10.1109/iedm.2016.7838547

Ge nanoantennas for enhanced emission at telecom wavelengths

Autor: Celebrano, M., Baselli, M, Bollani, M, Frigerio, J, Bahgat Shehata, A, Della Frera, A, Tosi, A, Farina, A, Osmond, J, Wu, X, Hecht, B, Sordan, R, Chrastina, D, Isella, G, Duò, L, Finazzi, M, Bagioni, P., PEZZOLI, FABIO

Over the last decade Ge has been proposed as one of the most promising materials for light detection, modulation, and emission in silicon-photonics architectures. Its direct band-gap, which is only about 140 meV larger than the indirect one, ensures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::eb92eb42c7b28dcb516865f7cc051a22
http://hdl.handle.net/10281/87914

Time-Resolved Diffuse Optical Spectroscopy up to 1700 nm by Means of a Time-Gated InGaAs/InP Single-Photon Avalanche Diode

Autor: Adriano Della Frera, Andrea Farina, Andrea Bahgat Shehata, Andrea Bassi, Alberto Dalla Mora, Antonio Pifferi, Franco Zappa, Rinaldo Cubeddu, Paola Taroni, Ilaria Bargigia, Alberto Tosi

Publikováno v: Applied spectroscopy 66 (2012): 944–950. doi:10.1366/11-06461
info:cnr-pdr/source/autori:Bargigia, Ilaria; Tosi, Alberto; Shehata, Andrea Bahgat; Della Frera, Adrian; Farina, Andrea; Bassi, Andrea; Taroni, Paola; Dalla Mora, Alberto; Zappa, Franco; Cubeddu, Rinaldo; Pifferi, Antonio/titolo:Time-Resolved Diffuse Optical Spectroscopy up to 1700 nm by Means of a Time-Gated InGaAs%2FInP Single-Photon Avalanche Diode/doi:10.1366%2F11-06461/rivista:Applied spectroscopy/anno:2012/pagina_da:944/pagina_a:950/intervallo_pagine:944–950/volume:66

We present a new compact system for time-domain diffuse optical spectroscopy of highly scattering media operating in the wavelength range from 1100 nm to 1700 nm. So far, this technique has been exploited mostly up to 1100 nm: we extended the spectra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41e2505585c0132b9bcbda27a2e7cd7b
https://doi.org/10.1366/11-06461

Time-integrated photon emission as a function of temperature in 32 nm CMOS

Autor: Herve Deslandes, Euan Ramsay, Peilin Song, Alan J. Weger, Franco Stellari, Ted R. Lundquist, Andrea Bahgat Shehata

Publikováno v: IRPS

This work presents a study of the effect of chip temperature on Photon Emission Microscopy (PEM) images acquired with an extended sensitivity near-infrared camera. A detailed analysis of the detection of thermal radiation, as well as leakage and swit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c566a1f90a5f796249cea04345b8456
https://doi.org/10.1109/irps.2015.7112675