Zobrazeno 1 - 10
of 22 158
pro vyhledávání: '"A. BIENIEK"'
Autor:
Sadecka, Katarzyna, Bieniek, Maciej, Junior, Paulo E. Faria, Wójs, Arkadiusz, Hawrylak, Paweł, Pawłowski, Jarosław
We describe here a theory of a quantum dot in an electrically tunable MoSe$_2$/WSe$_2$ heterostructure. Van der Waals heterostructures allow for tuning their electronic properties beyond their monolayer counterparts. We start by determining their ele
Externí odkaz:
http://arxiv.org/abs/2412.15599
As the boundaries of human computer interaction expand, Generative AI emerges as a key driver in reshaping user interfaces, introducing new possibilities for personalized, multimodal and cross-platform interactions. This integration reflects a growin
Externí odkaz:
http://arxiv.org/abs/2411.10234
Autor:
Karwounopoulos, Johannes, Bieniek, Mateusz, Wu, Zhiyi, Baskerville, Adam L., Koenig, Gerhard, Cossins, Benjamin P., Wood, Geoffrey P. F.
The development of machine-learning (ML) potentials offers significant accuracy improvements compared to molecular mechanics (MM) because of the inclusion of quantum-mechanical effects in molecular interactions. However, ML simulations are several ti
Externí odkaz:
http://arxiv.org/abs/2410.16818
Autor:
O'Brien, George obrien@businesswest.com
Publikováno v:
BusinessWest. 5/29/2017, Vol. 34 Issue 3, p28-43. 4p.
Publikováno v:
Int. J. Engng Science, 203, 1 October 2024, 104118
The goal of this paper is to develop a reliable analytical approach to finding the effective elastic-plastic response of metal matrix composites (MMC) and porous metals (PM) with a predefined particle or void distribution, as well as to examine the a
Externí odkaz:
http://arxiv.org/abs/2408.04654
Autor:
SZYCHTA, ANNA1 anna.szychta@uni.lodz.pl
Publikováno v:
Zeszyty Teoretyczne Rachunkowości. 2023, Vol. 47 Issue 1, p151-171. 21p.
Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repu
Externí odkaz:
http://arxiv.org/abs/2406.15717
Autor:
Weber, Bent, Fuhrer, Michael S, Sheng, Xian-Lei, Yang, Shengyuan A, Thomale, Ronny, Shamim, Saquib, Molenkamp, Laurens W, Cobden, David, Pesin, Dmytro, Zandvliet, Harold J W, Bampoulis, Pantelis, Claessen, Ralph, Menges, Fabian R, Gooth, Johannes, Felser, Claudia, Shekhar, Chandra, Tadich, Anton, Zhao, Mengting, Edmonds, Mark T, Jia, Junxiang, Bieniek, Maciej, Väyrynen, Jukka I, Culcer, Dimitrie, Muralidharan, Bhaskaran, Nadeem, Muhammad
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of
Externí odkaz:
http://arxiv.org/abs/2406.14209
Autor:
Pawłowski, Jarosław, Miravet, Daniel, Bieniek, Maciej, Korkusinski, Marek, Boddison-Chouinard, Justin, Gaudreau, Louis, Luican-Mayer, Adina, Hawrylak, Pawel
Publikováno v:
Phys. Rev. B 110 125147 (2024)
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exac
Externí odkaz:
http://arxiv.org/abs/2406.08655