Zobrazeno 1 - 10
of 43
pro vyhledávání: '"A. B. Talochkin"'
Autor:
A. B. Talochkin
Publikováno v:
Journal of Raman Spectroscopy. 51:201-206
Autor:
Anton K. Gutakovskii, A. B. Talochkin
Publikováno v:
JETP Letters. 106:780-784
Strain in SiGeSn alloy layers with thicknesses of d = 1.5 and 2.0 nm grown in a Si matrix by molecular-beam epitaxy is investigated using the geometric-phase analysis of high-resolution electron microscopy images. The layer thickness is comparable to
Autor:
Yuri V. Nastaushev, Lyudmila S. Golobokova, F.N. Dultsev, T. A. Gavrilova, Alexander V. Latyshev, Alexander B. Talochkin
Publikováno v:
Solid State Phenomena. 245:8-13
The optical properties of ordered arrays of silicon nanorods (Si NRs) were investigated. Electron Beam Lithography followed by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) was used for Si NRs fabrication. Si NRs were chemically and elect
Autor:
I. B. Chistokhin, A. B. Talochkin
Publikováno v:
Journal of Experimental and Theoretical Physics. 113:510-515
The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to
Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix
Autor:
I. B. Chistokhin, A. B. Talochkin
Publikováno v:
Semiconductors. 45:907-911
Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. T
Autor:
A. B. Talochkin
Publikováno v:
Journal of Experimental and Theoretical Physics. 111:1003-1009
The spectra of Raman scattering by folded acoustic phonons in Si/Ge superlattices with pseudomorphic layers of Ge quantum dots (QDs) grown by low-temperature (T = 250°C) molecular beam epitaxy are studied. New features of the folded phonon lines rel
Publikováno v:
Semiconductors. 43:997-1001
Spectra of lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots, fabricated by molecular-beam epitaxy are studied. The photoresponse caused by optical transitions between hole levels of quantum dots and Si electronic states w
Publikováno v:
Journal of Crystal Growth. 311:3898-3903
The formation of Ge nanoislands directly on Si(1 1 1) surface before the completion of a wetting layer was studied by scanning tunneling microscopy and Raman scattering spectroscopy. The mechanism of the wetting layer formation in the Ge/Si(1 1 1) sy
Publikováno v:
JETP Letters. 86:344-347
Raman scattering on optical phonons in Si/Ge/Si structures with Ge quantum dots grown by molecular beam epitaxy at low temperatures 200–300°C has been investigated. A pseudomorphic state of an array of Ge quantum dots to a Si matrix with an ideall
Publikováno v:
Journal of Experimental and Theoretical Physics. 102:828-835
The positions and shapes of the Raman E 1 and E 1 + Δ1 resonances of optical phonons are studied as functions of the size of unstrained germanium quantum dots. The quantum dots are grown by molecular-beam epitaxy in GaAs/ZnSe/Ge/ZnSe structures on G