Zobrazeno 1 - 10
of 50
pro vyhledávání: '"A. B. Pashkovskii"'
Autor:
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Shcherbakov
Publikováno v:
Technical Physics Letters. 47:329-332
Autor:
Andrey B. Pashkovskii, Sergey V. Shcherbakov, Askhat K. Bakarov, Alexandr B. Grigorenko, K. S. Zhuravlev, Evgeniy V. Tereshkin, Vladimir G. Lapin, Sergey A. Bogdanov, Ilya A. Rogachev, Vladimir M. Lukashin
Publikováno v:
IEEE Transactions on Electron Devices. 68:53-56
In this article, we present GaAs millimeter-wave pseudomorphic high-electron-mobility transistor (pHEMT) using sophisticated AlGaAs-InGaAs–GaAs heterostructure with an In0.22Ga0.78As quantum well located inside an external quantum well formed by sp
Autor:
V. G. Lapin, D. V. Gulyaev, A. K. Bakarov, A. B. Pashkovskii, K. S. Zhuravlev, V. M. Lukashin, D. Yu. Protasov, A. I. Toropov
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:478-484
A new type of AlGaAs/InGaAs/GaAs heterostructures with energy barriers formed in the AlGaAs transistor layers adjacent to the InGaAs channel, modulation-doped with donors and acceptors is presented. The height of the barriers associated with the pote
Publikováno v:
Russian Microelectronics. 49:195-209
A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrodinger and Poisson equations and a syst
Autor:
A. B. Pashkovskii, S. A. Bogdanov
Publikováno v:
Technical Physics Letters. 45:1020-1023
The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in AlxGa1 –xAs–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that
Publikováno v:
Journal of Communications Technology and Electronics. 65:1457-1459
Based on the previously developed computer program for rigorous calculation of modes in optical fibers containing layers of various materials of arbitrary, including nanometer, thickness, the calculation and optimization of single-mode double adiabat
Autor:
V. M. Lukashin, N. K. Pristupchik, M. I. Lopin, I. V. Kulikova, V. G. Lapin, L. V. Manchenko, V. G. Kalina, A. D. Zakurdaev, A. B. Pashkovskii
Publikováno v:
Technical Physics. 64:220-225
Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of add
Publikováno v:
Applied optics. 59(29)
The results of the rigorous calculation of mode fields in double adiabatic, single-mode etched-out optical fiber tapers coated with thin indium tin oxide films are discussed in the context of their application as environment refractive index sensors.
Publikováno v:
Technical Physics Letters. 44:804-807
A simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrodinger and Poisson equations and the hydrodynamic system o
Publikováno v:
Technical Physics Letters. 43:562-566
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is cha