Zobrazeno 1 - 10
of 10
pro vyhledávání: '"A. B. Kamalov"'
Autor:
Maria I. Markevich, Amangeldi B. Kamalov, Dauran J. Asanov, Daryabay M. Esbergenov, Manzura A. Kazakbaeva
Publikováno v:
East European Journal of Physics, Iss 2, Pp 394-397 (2024)
This study investigates the morphology of carbon nanoparticles generated through the ablation of an MPG-6 carbon target in an aqueous environment. The ablation process utilized an LS-2134D aluminum yttrium garnet laser (wavelength: 1064 nm) operating
Externí odkaz:
https://doaj.org/article/e76ffd3a758e48318f78f716e2a4da34
Publikováno v:
2020 11th International Conference on Mechanical and Aerospace Engineering (ICMAE).
This paper presents a low-cost smart door locking system capable of making decisions based on facial recognition technology. The system operates through a combination of Arduino UNO and Android-based smartphone. It is capable of performing all the fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2081edc529e5c80ccfe34ec5528403b9
https://doi.org/10.1109/icmae50897.2020.9178866
https://doi.org/10.1109/icmae50897.2020.9178866
Autor:
V. N. Ivanov, V. V. Milenin, V. P. Kladko, Alexander Belyaev, N. S. Boltovets, P. V. Nevolin, M. U. Nasyrov, Ya. Ya. Kudryk, A. B. Kamalov, L. M. Kapitanchuk, R. V. Konakova
Publikováno v:
Semiconductors. 43:1428-1432
Au-TiBx-AuGe-n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb43c024cd725b3263931829fca3067d
https://doi.org/10.1134/s1063782609110062
https://doi.org/10.1134/s1063782609110062
Autor:
A. B. Kamalov
Publikováno v:
Radioelectronics and Communications Systems. 52:545-548
Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo-GaAs contacts. It is shown that parameters of Schottky barriers (barriers heig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20431f770631a364ad9923ae4d74963
https://doi.org/10.3103/s0735272709100057
https://doi.org/10.3103/s0735272709100057
Autor:
A. B. Kamalov
Publikováno v:
Radioelectronics and Communications Systems. 52:160-164
In this paper it is considered an influence of gamma-radiation 60Co, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au-Ti(W, Cr, TiB x )-GaAs contacts, based on GaAs plate, containing n-n + s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9466bfa3689d0d9f34185978ceb985a
https://doi.org/10.3103/s073527270903008x
https://doi.org/10.3103/s073527270903008x
Autor:
A. V. Bobyl, Alexander Belyaev, I. S. Tarasov, A. B. Kamalov, V. N. Ivanov, Ya. Ya. Kudryk, I. N. Arsentyev, O. S. Lytvyn, N. S. Boltovets, E. V. Russu, R. V. Konakova, V. V. Milenin
Publikováno v:
Semiconductors. 42:777-782
Structural and electrical properties of Au-TiBx-nn+n++-InP and TiBx-nn+n++-InP multilayer barrier structures on standard (“rigid”) and soft (“porous”)n++-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e347096a4dab43600499e3f911b365ee
https://doi.org/10.1134/s1063782608070051
https://doi.org/10.1134/s1063782608070051
Autor:
L. M. Kapitanchuk, A. B. Kamalov, N. S. Boltovets, R. V. Konakova, V. V. Milenin, V. N. Ivanov, Ya. Ya. Kudryk, O. S. Lytvyn, M. U. Nasyrov, Alexander Belyaev
Publikováno v:
Semiconductors. 42:453-457
The effect of rapid thermal annealing on the parameters of TiBx-n-GaP Schottky barriers and interphase interactions at the TiBx-GaP interface are studied. It is shown that the contact TiBx-n-GaP system features an increased thermal stability without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9865a2b5b7ce86c5706819b1915ac16
https://doi.org/10.1134/s1063782608040143
https://doi.org/10.1134/s1063782608040143
Autor:
A. B. Kamalov
Publikováno v:
Radioelectronics and Communications Systems; Том 51, № 2 (2008); 80-86
In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::494db468f39fa80b45f6d0189b1389c8
https://doi.org/10.3103/s0735272708020040
https://doi.org/10.3103/s0735272708020040
Autor:
O.E. Rengevych, E. Yu. Kolyadina, O. S. Lytvyn, V. V. Milenin, N. S. Boltovets, L. A. Matveeva, Petr M. Lytvyn, A. B. Kamalov, R. V. Konakova
Publikováno v:
Technical Physics Letters. 28:154-156
We have studied the effect of microwave radiation (frequency, 2.45 GHz; specific power density, 1.5 W/cm2) on the relaxation of internal mechanical strains in the (i)n-n+-GaAs structures, (ii) Au-Ti-n-n+-GaAs diode structures with Schottky barriers,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325d699811a2198d5bd4b8701d4e0ecc
https://doi.org/10.1134/1.1458520
https://doi.org/10.1134/1.1458520
Publikováno v:
Veterinariia. (9)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::355d2f7b50e30f9c9a01207dc6b410e3
https://pubmed.ncbi.nlm.nih.gov/63177
https://pubmed.ncbi.nlm.nih.gov/63177