Výsledky vyhledávání - "A. B. Kamalov"

Akademický článek

Specific Features of Carbon Nanoparticle Formation Under the Influence of a Laser Operating in a Double-Pulse Generation Mode

Autor: Maria I. Markevich, Amangeldi B. Kamalov, Dauran J. Asanov, Daryabay M. Esbergenov, Manzura A. Kazakbaeva

Publikováno v: East European Journal of Physics, Iss 2, Pp 394-397 (2024)

This study investigates the morphology of carbon nanoparticles generated through the ablation of an MPG-6 carbon target in an aqueous environment. The ablation process utilized an LS-2134D aluminum yttrium garnet laser (wavelength: 1064 nm) operating

Externí odkaz: https://doaj.org/article/e76ffd3a758e48318f78f716e2a4da34

Zobrazit plný text záznamu

Development of Intelligent Door Locking System Based on Face Recognition Technology

Autor: B. Kamalov, A. Shokayev, Z. Rakhimbayeva, Md. Hazrat Ali, R. Khalimov

Publikováno v: 2020 11th International Conference on Mechanical and Aerospace Engineering (ICMAE).

This paper presents a low-cost smart door locking system capable of making decisions based on facial recognition technology. The system operates through a combination of Arduino UNO and Android-based smartphone. It is capable of performing all the fa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2081edc529e5c80ccfe34ec5528403b9
https://doi.org/10.1109/icmae50897.2020.9178866

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Interphase interactions and the mechanism of current flow in Au-TiB x -AuGe-n-GaP ohmic contacts

Autor: V. N. Ivanov, V. V. Milenin, V. P. Kladko, Alexander Belyaev, N. S. Boltovets, P. V. Nevolin, M. U. Nasyrov, Ya. Ya. Kudryk, A. B. Kamalov, L. M. Kapitanchuk, R. V. Konakova

Publikováno v: Semiconductors. 43:1428-1432

Au-TiBx-AuGe-n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb43c024cd725b3263931829fca3067d
https://doi.org/10.1134/s1063782609110062

Zobrazit plný text záznamu

Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

Autor: A. B. Kamalov

Publikováno v: Radioelectronics and Communications Systems. 52:545-548

Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo-GaAs contacts. It is shown that parameters of Schottky barriers (barriers heig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e20431f770631a364ad9923ae4d74963
https://doi.org/10.3103/s0735272709100057

Zobrazit plný text záznamu

Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

Autor: A. B. Kamalov

Publikováno v: Radioelectronics and Communications Systems. 52:160-164

In this paper it is considered an influence of gamma-radiation 60Co, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au-Ti(W, Cr, TiB x )-GaAs contacts, based on GaAs plate, containing n-n + s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9466bfa3689d0d9f34185978ceb985a
https://doi.org/10.3103/s073527270903008x

Zobrazit plný text záznamu

Properties of barrier contacts with nanosize TiB x layers to InP

Autor: A. V. Bobyl, Alexander Belyaev, I. S. Tarasov, A. B. Kamalov, V. N. Ivanov, Ya. Ya. Kudryk, I. N. Arsentyev, O. S. Lytvyn, N. S. Boltovets, E. V. Russu, R. V. Konakova, V. V. Milenin

Publikováno v: Semiconductors. 42:777-782

Structural and electrical properties of Au-TiBx-nn+n++-InP and TiBx-nn+n++-InP multilayer barrier structures on standard (“rigid”) and soft (“porous”)n++-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e347096a4dab43600499e3f911b365ee
https://doi.org/10.1134/s1063782608070051

Zobrazit plný text záznamu

Thermal-resistant TiB x -n-GaP Schottky diodes

Autor: L. M. Kapitanchuk, A. B. Kamalov, N. S. Boltovets, R. V. Konakova, V. V. Milenin, V. N. Ivanov, Ya. Ya. Kudryk, O. S. Lytvyn, M. U. Nasyrov, Alexander Belyaev

Publikováno v: Semiconductors. 42:453-457

The effect of rapid thermal annealing on the parameters of TiBx-n-GaP Schottky barriers and interphase interactions at the TiBx-GaP interface are studied. It is shown that the contact TiBx-n-GaP system features an increased thermal stability without

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9865a2b5b7ce86c5706819b1915ac16
https://doi.org/10.1134/s1063782608040143

Zobrazit plný text záznamu

Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures

Autor: A. B. Kamalov

Publikováno v: Radioelectronics and Communications Systems; Том 51, № 2 (2008); 80-86

In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation chan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::494db468f39fa80b45f6d0189b1389c8
https://doi.org/10.3103/s0735272708020040

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání