Výsledky vyhledávání - "A. B. Hopcus"

Growth of GaS on GaAs(100)-(4×2) with the single-source precursor [(tBu)GaS]4

Autor: R.I. Pelzel, S.I. Yi, A. B. Hopcus, W.H. Weinberg, C.-H. Chung

Publikováno v: Surface Science. 446:55-62

The growth of a GaS film on the GaAs(100)-(4×2) surface, using [(tBu)GaS]4, has been studied in ultra-high vacuum using high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), low-energy electron diffraction (L

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a56d3ee0d5f7bae05a11d9f26abcd107
https://doi.org/10.1016/s0039-6028(99)01090-0

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Chemistry of [(t-butyl)GaS][sub 4] on Si(100)-(2×1)

Autor: J. H. G. Owen, B. Z. Nosho, R.I. Pelzel, W.H. Weinberg, A. B. Hopcus

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:2399

We have studied the chemistry of [(t-butyl)GaS]4 on Si(100)-(2×1) in ultrahigh vacuum. The characterization techniques used in this study were Auger electron spectroscopy (AES), temperature programmed desorption (TPD), and low-energy electron diffra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bccbd50b5ba8565eca93e1e738721e97
https://doi.org/10.1116/1.590181

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