Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. B. Aleinikov"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 2, Pp 195-198 (2017)
The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) has b
Externí odkaz:
https://doaj.org/article/b3af517b367b494085dfeb9411f4e70d
Publikováno v:
Silicon. 11:1011-1015
Purpose of the work is to study a nature of the excess tunnel current in heavily doped silicon p − n junction diodes with lengthy compensation region in the p − n junction. In such the diodes, formation of the system of electron and hole “lakes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc9e9ff488d4f45e145d40763842560
https://doi.org/10.1007/s12633-018-9923-z
https://doi.org/10.1007/s12633-018-9923-z
Autor:
A. B. Aleinikov
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 15:288-293
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5e904858b579a0c550c548e4893cb4
https://doi.org/10.15407/spqeo15.03.288
https://doi.org/10.15407/spqeo15.03.288
Autor:
S. P. Plotnikova, V. I. Sukhov, V. E. Borodin, V. V. Plotnikov, I. Yu. Nemish, V. N. Panteleev, A. B. Aleinikov
Publikováno v:
Chemical and Petroleum Engineering. 28:380-384
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e029824a2a3c25e7a9f5b8fa91c2af
https://doi.org/10.1007/bf01148985
https://doi.org/10.1007/bf01148985