Zobrazeno 1 - 10
of 2 214
pro vyhledávání: '"A. Anhar"'
Autor:
Allaily ., A.D. Santoso, M.N. Rofiq, N.A. Sasongko, H. Daulay, E.I. Wiloso, E. Widjaja, B.N. Utomo, A.I. Yanuar, S. Suryani, Y.P. Erlambang, U.N. Thiyas, D. Iskandar, A. Anhar, M. Rahmawati, T. Simamora, Y. Yusriani, G. Maghfirah, M. Ammar
Publikováno v:
Global Journal of Environmental Science and Management, Vol 10, Iss 3, Pp 1275-1296 (2024)
BACKGROUND AND OBJECTIVES: Sago plant is a valuable source of raw material for the processing industry and every part is very useful for food and shelter. Moreover, by-products of the Sago processing industry are useful as animal feed and liquid wast
Externí odkaz:
https://doaj.org/article/df0e2fa0ddc049a085e7af434e79c1be
A systematic investigation of the electrical characteristics of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes (SBDs) has been conducted under high dose $^{60}$Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted
Externí odkaz:
http://arxiv.org/abs/2408.11028
Autor:
Saha, Chinmoy Nath, Vaidya, Abhishek, Bhuiyan, A F M Anhar Uddin, Meng, Lingyu, Zhao, Hongping, Singisetti, Uttam
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and hig
Externí odkaz:
http://arxiv.org/abs/2305.04725
Autor:
Saha, Sudipto, Meng, Lingyu, Bhuiyan, A F M Anhar Uddin, Sharma, Ankit, Saha, Chinmoy Nath, Zhao, Hongping, Singisetti, Uttam
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration o
Externí odkaz:
http://arxiv.org/abs/2304.05904
Autor:
Bhuiyan, A. F. M. Anhar Uddin, Meng, Lingyu, Huang, Hsien-Lien, Sarker, Jith, Chae, Chris, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained
Externí odkaz:
http://arxiv.org/abs/2301.10897
Autor:
Saha, Chinmoy Nath, Vaidya, Abhishek, Bhuiyan, A F M Anhar Uddin, Meng, Lingyu, Zhao, Hongping, Singisetti, Uttam
This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and pe
Externí odkaz:
http://arxiv.org/abs/2211.01088
The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $\beta$-(Al
Externí odkaz:
http://arxiv.org/abs/2207.13001
Autor:
Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Huang, Hsien-Lien, Meng, Lingyu, Hwang, Jinwoo, Zhao, Hongping
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and s
Externí odkaz:
http://arxiv.org/abs/2207.12582
Autor:
Turner, Paul J *, *, Baseggio Conrado, Alessia *, Kallis, Constantinos, O’Rourke, Eimear, Haider, Sadia, Ullah, Anhar, Custovic, Darije, Custovic, Adnan, Quint, Jennifer K
Publikováno v:
In The Lancet Public Health September 2024 9(9):e664-e673
Autor:
Hernandez-Pacheco, Natalia, Kilanowski, Anna, Kumar, Ashish, Curtin, John A., Olvera, Núria, Kress, Sara, Bertels, Xander, Lahousse, Lies, Bhatta, Laxmi, Granell, Raquel, Marí, Sergi, Bilbao, Jose Ramon, Sun, Yidan, Tingskov Pedersen, Casper-Emil, Karramass, Tarik, Thiering, Elisabeth, Dardani, Christina, Kebede Merid, Simon, Wang, Gang, Hallberg, Jenny, Koch, Sarah, Garcia-Aymerich, Judith, Esplugues, Ana, Torrent, Maties, Ibarluzea, Jesus, Lowe, Lesley, Simpson, Angela, Gehring, Ulrike, Vermeulen, Roel C.H., Roberts, Graham, Bergström, Anna, Vonk, Judith M., Felix, Janine F., Duijts, Liesbeth, Bønnelykke, Klaus, Timpson, Nic, Brusselle, Guy, Brumpton, Ben M., Langhammer, Arnulf, Turner, Stephen, Holloway, John W., Arshad, Syed Hasan, Ullah, Anhar, Custovic, Adnan, Cullinan, Paul, Murray, Clare S., van den Berge, Maarten, Kull, Inger, Schikowski, Tamara, Wedzicha, Jadwiga A., Koppelman, Gerard, Faner, Rosa, Agustí, Àlvar, Standl, Marie, Melén, Erik
Publikováno v:
In eClinicalMedicine September 2024 75