Zobrazeno 1 - 10
of 20
pro vyhledávání: '"A. Aluyev"'
Autor:
A. Savchuk, O. Rabinovich, V. Mezhenny, A. Chelny, S. Didenko, A. Aluyev, N. Kourova, Yu. Akhmerov, M. Orlova
Publikováno v:
AIP Advances, Vol 12, Iss 2, Pp 025217-025217-4 (2022)
Investigation of the effect of crystal defects on nonpolar a-GaN films grown by metalorganic chemical vapor deposition on r-sapphire substrates is presented. Samples were grown at different temperatures and the same V/III ratio. High-temperature nucl
Externí odkaz:
https://doaj.org/article/8c2022da62ad41b0bb7025ed0fb24ee9
Akademický článek
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Publikováno v:
Optical Components and Materials XVIII.
The investigation of the doping level influence and p-n junction location in the barrier photodetector with InGaAS/AlInAs on InP was carried out. The detectivity value is determined by the differential resistance and it is related to the photosensiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d017d3d406d7de3b2cbc39365c59e02
https://doi.org/10.1117/12.2577018
https://doi.org/10.1117/12.2577018
Autor:
V. N. Murashev, M. Zakusov, O. I. Rabinovich, Yu Akhmerov, N. Kourova, S. I. Didenko, A. Savchuk, A. Zharkova, A. Chelny, O. R. Abdullaev, A. Aluyev, M. Mezhenny
Publikováno v:
Journal of Physics: Conference Series. 1410:012022
The a-GaN films were successfully grown on the r-sapphire substrate by MOCVD method. The structure of V-defects was investigated by AFM and SEM. The dependence of V-defects density on growth temperature of a-GaN film at a constant hydrogen flow throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b9ac0b4488c1398600c2f75088858b
https://doi.org/10.1088/1742-6596/1410/1/012022
https://doi.org/10.1088/1742-6596/1410/1/012022
Autor:
S. Sizov, A. Savchuk, A. Chelny, O. Abdullaev, S. I. Didenko, Yu Ahmerov, Oleg Rabinovich, V. N. Murashev, Yu Osipov, Marina Orlova, A. Aluyev, M. Mezhenny
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 617:012015
The n-type and p-type a-GaN films were successfully grown on a r-sapphire substrate, according to X-ray diffractometer and SEM results parameters measurement. The growth rate versus the growth temperature was investigated. The holes concentration (8x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ee305b9b10175d1e3b0d90b29f66f0
https://doi.org/10.1088/1757-899x/617/1/012015
https://doi.org/10.1088/1757-899x/617/1/012015
Chromaticity coordinates temperature dependence for blue laser diodes for solid state laser lighting
Autor:
S. I. Didenko, V. N. Murashev, A. Savchuk, A. Chelny, Yu Akhmerov, O. I. Rabinovich, M. Mezhenny, N. Kourova, A. Aluyev, V Logachev
Publikováno v:
Journal of Physics: Conference Series. 1124:041032
Colour characteristic temperature dependence of such as X- and Y-coordinates (CIE 1931) for high power blue laser diode was investigated. It was shown, that thermal stability of colour characteristic of high power blue laser diode allows to create so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6ab425889a2b3a2969e6bc15451e81
https://doi.org/10.1088/1742-6596/1124/4/041032
https://doi.org/10.1088/1742-6596/1124/4/041032
Autor:
Jiang, Shibin, Digonnet, Michel J. F., Chelny, Alex, Savchuk, Alex, Rabinovich, Oleg, Mezhenny, Mikhail, Aluyev, Alex, Didenko, Sergey
Publikováno v:
Proceedings of SPIE; 1/14/2021, Vol. 11682, p1168204-1168204, 1p
Autor:
O Abdullaev, M Mezhenny, A Chelny, A Savchuk, Yu Ahmerov, O Rabinovich, V Murashev, S Didenko, Yu Osipov, S Sizov, M Orlova, A Aluyev
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Oct2019, Vol. 617 Issue 1, p1-1, 1p
Autor:
A Aluyev, Yu Akhmerov, N Kourova, V Logachev, M Mezhenny, A Chelny, A Savchuk, V Murashev, O Rabinovich, S Didenko
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1124 Issue 4, p1-1, 1p
Autor:
Abdullaev, O, Mezhenny, M, Chelny, A, Savchuk, A, Ahmerov, Yu, Rabinovich, O, Murashev, V, Didenko, S, Osipov, Yu, Sizov, S, Orlova, M, Aluyev, A
Publikováno v:
IOP Conference Series: Materials Science and Engineering; September 2019, Vol. 617 Issue: 1 p012015-012015, 1p