Zobrazeno 1 - 10
of 409
pro vyhledávání: '"A. Akilbekov"'
Publikováno v:
Physical Sciences and Technology, Vol 5, Iss 3-4 (2019)
The paper shows the advantage of silicon nitride for use as a light-emitting element in integrated circuits. Along with this, the chosen methods for obtaining the studied samples enable us to determine all possible causes responsible for radiative re
Externí odkaz:
https://doaj.org/article/c40466aa6a7e4aa99f00fa8906e33035
Autor:
Gulnara Aralbayeva, Gulnaz Sarsekhan, Aiman Akylbekova, Liudmila A. Vlasukova, Zein Baimukhanov, Vera Yuvchenko, Assyl-Dastan Bazarbek, Alma Dauletbekova, Gaukhar Kabdrakhimova, Abdirash T. Akilbekov
Publikováno v:
Crystals, Vol 14, Iss 8, p 730 (2024)
We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO3) deposited into SiO2/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 108 ions/cm2) fo
Externí odkaz:
https://doaj.org/article/0ef9fe4898ea4eaba01f46254c7122d3
Autor:
Aiman Akylbekova, Alma Dauletbekova, Zein Baimukhanov, Liudmila A. Vlasukova, Abay Usseinov, Nuray Saduova, Abdirash T. Akilbekov, Vladimir A. Pankratov, Anatoli I. Popov
Publikováno v:
Materials, Vol 17, Iss 16, p 4149 (2024)
We report the results of synthesis of zinc selenide (ZnSe) nanocrystals into SiO2/Si track templates formed by irradiation with 200 MeV Xe ions up to a fluence of 107 ions/cm2. Zinc selenide nanocrystals were obtained by chemical deposition from the
Externí odkaz:
https://doaj.org/article/a11eca52edf34cc5be17249447a48349
Autor:
Inerbaev, Talgat1,2 (AUTHOR) talgat.inerbaev@gmail.com, Akilbekov, Abdirash1 (AUTHOR) akilbekov_at@enu.kz, Kenbayev, Daurzhan1 (AUTHOR) daurzhankenbayev@gmail.com, Dauletbekova, Alma1 (AUTHOR) ak.daukletbekova@gmail.com, Shalaev, Alexey3 (AUTHOR) alshal@igc.irk.ru, Polisadova, Elena4 (AUTHOR) polisadova72@gmail.com, Konuhova, Marina5 (AUTHOR) marina.konuhova@cfi.lu, Piskunov, Sergei5 (AUTHOR) piskunov@lu.lv, Popov, Anatoli I.1,5 (AUTHOR) piskunov@lu.lv
Publikováno v:
Materials (1996-1944). Jul2024, Vol. 17 Issue 13, p3340. 15p.
Autor:
Talgat Inerbaev, Abdirash Akilbekov, Daurzhan Kenbayev, Alma Dauletbekova, Alexey Shalaev, Elena Polisadova, Marina Konuhova, Sergei Piskunov, Anatoli I. Popov
Publikováno v:
Materials, Vol 17, Iss 13, p 3340 (2024)
This study presents theoretical and experimental investigations into the electron and hole color centers in BaFBr crystals, characterizing their electronic and optical properties. Stoichiometric BaFBr crystals grown by the Steber method were used in
Externí odkaz:
https://doaj.org/article/1af7e3d84e934ef480ca92b6b135c9da
Autor:
Abdirash Akilbekov, Daurzhan Kenbayev, Alma Dauletbekova, Alexey Shalaev, Aiman Akylbekova, Gulnara Aralbayeva, Zein Baimukhanov, Muratbek Baizhumanov, Edgars Elsts, Anatoli I. Popov
Publikováno v:
Crystals, Vol 14, Iss 6, p 480 (2024)
Today, BaFBr crystals activated by europium ions are used as detectors that store absorbed energy in metastable centers. In these materials, the image created by X-ray irradiation remains stable in the dark for long periods at room temperature. As a
Externí odkaz:
https://doaj.org/article/6cc2f79c47a54ee18f9a890d0d7838b8
Akademický článek
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Akademický článek
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Publikováno v:
In Radiation Measurements September 2023 167
Autor:
Zein Baimukhanov, Alma Dauletbekova, Diana Junisbekova, Valeriy Kalytka, Abdirash Akilbekov, Aiman Akylbekova, Guldar Baubekova, Gulnara Aralbayeva, Assyl-Dastan Bazarbek, Abay Usseinov, Anatoli I. Popov
Publikováno v:
Materials, Vol 17, Iss 6, p 1226 (2024)
Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nan
Externí odkaz:
https://doaj.org/article/de0db46b7b3445b984fff066e73f7876