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Autor:
P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik
Publikováno v:
Âderna Fìzika ta Energetika, Vol 9, Iss 2(24), Pp 60-67 (2008)
In given article various methods of the increase of the radiation hardness of semiconductors materials such as silicon and InSb are discussed. Parameters of silicon irradiated by different types and fluences of high energy irradiation and annealed we
Externí odkaz:
https://doaj.org/article/b31887ed828b4ef3b3f9f24444096105
