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pro vyhledávání: '"A. A. Tychkin"'
Akademický článek
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Autor:
Anosov, Vasily S., Gomzikov, Denis V., Ichetovkin, Maxim I., Seidman, Lev A., Tychkin, Roman I.
Publikováno v:
In Modern Electronic Materials September 2017 3(3):117-121
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 3, Pp 117-121 (2017)
The aim of this work is to study the possibility of reducing the labor consumption and cost of high-power silicon transistor manufacturing without compromise in transistor low thermal resistance. To this end we experimentally explored replacing Au-Si
Externí odkaz:
https://doaj.org/article/0e6c2389f899411b84bb2df817df4532
Autor:
Andrey A. Yablokov, Igor E. Ivanov, Filipp A. Kulikov, Anton V. Panaschatenko, Yaroslav A. Umnov, Andrey R. Tychkin
Publikováno v:
2023 5th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE).
Publikováno v:
2022 5th International Youth Scientific and Technical Conference on Relay Protection and Automation (RPA).
Synchrophasor-based Fault Location with Class M Fault Capture and Built-in Line Parameter Estimation
Autor:
Andrey Yablokov, Igor Ivanov, Filipp Kulikov, Andrey Tychkin, Anton Panaschatenko, Andrey Zhukov, Dmitriy Dubinin
Publikováno v:
2022 International Conference on Smart Grid Synchronized Measurements and Analytics (SGSMA).
Publikováno v:
2021 4th International Youth Scientific and Technical Conference on Relay Protection and Automation (RPA).
Publikováno v:
E3S Web of Conferences, Vol 288, p 01058 (2021)
Ferroresonance phenomena lead to damage to electromagnetic measuring voltage transformers and nearby equipment. Damping devices and antiresonance transformers, which are used for preventing the occurrence of ferroresonance phenomena, are effective in
Autor:
Yablokov, A. A., Ivanov, I. E., Panashchatenko, A. V., Tychkin, A. R., Kulikov, F. A., Murzin, A. Yu., Lachugin, V. F.
Publikováno v:
Power Technology & Engineering; Sep2022, Vol. 56 Issue 3, p427-437, 11p
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 3, Pp 117-121 (2017)
The aim of this work is to study the possibility of reducing the labor consumption and cost of high-power silicon transistor manufacturing without compromise in transistor low thermal resistance. To this end we experimentally explored replacing Au-Si