Zobrazeno 1 - 10
of 94
pro vyhledávání: '"A. A. Studna"'
Publikováno v:
Český lid, 1927 Jan 01. 27(5/6), 229-230.
Externí odkaz:
https://www.jstor.org/stable/44980802
Publikováno v:
Journal of Applied Physics; Aug1977, Vol. 48 Issue 8, p3510-3513, 4p
Autor:
L. T. Florez, A.A. Studna, Rajaram Bhat, J. P. Harbison, V. G. Keramidas, E. Colas, David E. Aspnes, M.A. Koza
Publikováno v:
Journal of Crystal Growth. 107:47-55
Reflectance difference spectroscopy (RDS) is a surface analysis technique that was invented in 1985 by Aspnes. Here, we give a summary of its application to crystal growth techniques which gave new and valuable real time information about the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebf5508eae64107e28d88d1f91b1aa5
https://doi.org/10.1016/0022-0248(91)90433-6
https://doi.org/10.1016/0022-0248(91)90433-6
Publikováno v:
Vacuum. 41:978-981
This paper summarizes results of our investigations of growth on (001) and (110) GaAs by atmospheric pressure organometallic chemical vapor deposition (OMCVD). We follow evolutions of surface species to a sensitivity of 0.01 monolayer (ML) on a time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2477ca2ce50556c8435d2e20aeb10f5
https://doi.org/10.1016/0042-207x(90)93839-b
https://doi.org/10.1016/0042-207x(90)93839-b
Publikováno v:
SPIE Proceedings.
This paper summarizes results of our investigations of growth on (001) and (110) GaAs by atmospheric-pressure organometallic chemical vapor deposition (OMCVD). We follow evolutions of surface species to a sensitivity of 0.01 monolayer (ML) on a time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e449a13392cc9f942306e82916f2bb1
https://doi.org/10.1117/12.963921
https://doi.org/10.1117/12.963921
Publikováno v:
AIP Conference Proceedings; Jun1981, Vol. 73 Issue 1, p307-311, 5p
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:936
Using the double‐modulation extension of reflectance‐difference spectroscopy, we obtain surface dielectric anisotropy spectra under steady‐state conditions for several reconstructions encountered in molecular beam epitaxy on (001) GaAs and foll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4423ff1cec7a2fe7325329d563b9e788
https://doi.org/10.1116/1.584946
https://doi.org/10.1116/1.584946
Autor:
Aspnes, D. E., Studna, A. A., Florez, L. T., Chang, Y. C., Harbison, J. P., Kelly, M. K., Farrell, H. H.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1989, Vol. 7 Issue 4, p901-906, 6p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 4, p1127-1131, 5p
Autor:
Aspnes, D. E., Studna, A. A.
Publikováno v:
Review of Scientific Instruments; Mar1978, Vol. 49 Issue 3, p291-297, 7p