Zobrazeno 1 - 10
of 2 172
pro vyhledávání: '"A. A. Shashkin"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-6 (2023)
Abstract The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, t
Externí odkaz:
https://doaj.org/article/935d3eea224548a2b6d2453420162f70
Autor:
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensi
Externí odkaz:
https://doaj.org/article/15e6163bb86d475396cc295da24b899b
Autor:
Melnikov, M. Yu., Smirnov, D. G., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an ord
Externí odkaz:
http://arxiv.org/abs/2409.06686
Publikováno v:
Appl. Phys. Lett. 125, 153102 (2024)
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapp
Externí odkaz:
http://arxiv.org/abs/2405.18229
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-5 (2018)
At low densities, it is understood that the physics of two-dimensional electron gases becomes dominated by interactions but the nature of the state that forms remains controversial. Here the authors present transport measurements that indicate the ex
Externí odkaz:
https://doaj.org/article/259362752ba74196b6e260813ef13d64
Publikováno v:
Phys. Rev. B 109, L041114 (2024)
We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility S
Externí odkaz:
http://arxiv.org/abs/2310.03145
Autor:
Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 13, 17364 (2023)
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effect
Externí odkaz:
http://arxiv.org/abs/2304.04272
Publikováno v:
JETP Lett. 116, 156 (2022)
We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/S
Externí odkaz:
http://arxiv.org/abs/2204.12565
Autor:
Kazakova, Alena, Fomin, Evgenii, Levin, Aleksandr A., Nashchekin, Alexey, Shashkin, Ilya, Shuvalova, Natalya, Rastegaeva, Marina, Slipchenko, Sergey, Pikhtin, Nikita
Publikováno v:
In Thin Solid Films 30 August 2024 803
Autor:
Gorbunov, Dmitry, Nenasheva, Maria, Shashkin, Grigory, Shapovalov, Viktor, Shvets, Petr, Naranov, Evgeny, Maximov, Anton, Guda, Alexander, Soldatov, Alexander
Publikováno v:
In Journal of Industrial and Engineering Chemistry 25 August 2024 136:46-72