Zobrazeno 1 - 10
of 82
pro vyhledávání: '"A. A. Romanychev"'
Publikováno v:
In Journal of Alloys and Compounds 15 August 2021 872
Autor:
Viacheslav V. Romanychev
Publikováno v:
RUDN Journal of Political Science, Vol 23, Iss 3, Pp 479-494 (2021)
The rethinking of public policy in response to a rapidly changing world and economic development predetermined the relevance of studying the GR-activities of companies in the 21st century. Due to the fact that business-government relations have an in
Externí odkaz:
https://doaj.org/article/f6dab9ea25504d5890ecfb7196a92398
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Kukushkin, S. A.1,2 (AUTHOR), Osipov, A. V.1 (AUTHOR) andrey.v.osipov@gmail.com, Romanychev, A. I.3 (AUTHOR), Kasatkin, I. A.3 (AUTHOR), Loshachenko, A. S.3 (AUTHOR)
Publikováno v:
Technical Physics Letters. 2020, Vol. 46 Issue 11, p1049-1052. 4p.
Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates
Publikováno v:
Technical Physics Letters. 46:1049-1052
A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of epitaxial silicon carbide has been developed. The growth of this CdS phase is provi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ab854b72afacc7e96cde50f4a35bfc
https://doi.org/10.1134/s1063785020110085
https://doi.org/10.1134/s1063785020110085
Autor:
I.S Romanychev
Publikováno v:
CONFERENCE MATERIALS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b841929955e7f1df18d2c322fcbbbe8
https://doi.org/10.18411/spc-01-06-2020-04
https://doi.org/10.18411/spc-01-06-2020-04
Publikováno v:
Journal of Alloys and Compounds. 872:159746
Photoinduced hydrophilic behavior of TiO2 thin film synthesized by atomic layer deposition method on p-Si wafer as well on SiO2-coated glass has been studied. In contrast to the TiO2 film on SiO2-coated glass, the TiO2 film on the Si wafer initially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f647236a871509ffc14b1ba51fff23f9
https://doi.org/10.1016/j.jallcom.2021.159746
https://doi.org/10.1016/j.jallcom.2021.159746
Crystalline structure and composition of the ZnO films grown by atomic layer deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were studied. The SiC buffer layers have been synthesized by a novel method of atomic subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c5cfdb2b97a7c8a07971516a23b57f
Publikováno v:
Physics of the Solid State. 58:1448-1452
For the first time, zinc oxide epitaxial films on silicon were grown by the method of atomic layer deposition at a temperature T = 250°C. In order to avoid a chemical reaction between silicon and zinc oxide (at the growth temperature, the rate const
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c59dc94f8bcee892eab29d8ba4d4e9
https://doi.org/10.1134/s1063783416070246
https://doi.org/10.1134/s1063783416070246
Autor:
A. A. Lisachenko, I. Kh. Akopyan, V. Yu. Davydov, Ya. A. Mogunov, A. I. Romanychev, Boris Novikov, D. V. Nazarov, A. Yu. Serov, M. E. Labzovskaya, V. V. Titov, Alexander N. Smirnov, N. G. Filosofov
Publikováno v:
Physics of the Solid State. 57:1865-1869
The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42e5fc7500dcf09c2db86efd9a80961
https://doi.org/10.1134/s1063783415090036
https://doi.org/10.1134/s1063783415090036