Zobrazeno 1 - 10
of 469
pro vyhledávání: '"A. A. Kteyan"'
Within the framework of McLaughlin-Scott perturbation theory the equation-of-motion of the dislocation kink in the pinning potential is linearized, assuming the simultaneous influence of ac and dc forces. Based on the equations derived, the probabili
Externí odkaz:
http://arxiv.org/abs/0903.2700
Autor:
Valeriy Sukharev, Armen Kteyan, Farid N. Najm, Yong Hyeon Yi, Chris H. Kim, Jun-Ho Choy, Sofya Torosyan, Yu Zhu
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:4837-4850
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba0c400adef4598b99f0736184dd460
https://doi.org/10.1109/tcad.2021.3134886
https://doi.org/10.1109/tcad.2021.3134886
Autor:
Armen Kteyan, Valeriy Sukharev, Alexander Volkov, Jun Ho Choy, Farid N. Najm, Yong Hyeon Yi, Chris H. Kim, Stephane Moreau
Publikováno v:
ISPD '23: Proceedings of the 2023 International Symposium on Physical Design
ISPD'23-International Symposium on Physical Design
ISPD'23-International Symposium on Physical Design, Mar 2023, Virtual event USA, United States. pp.124-132
ISPD'23-International Symposium on Physical Design
ISPD'23-International Symposium on Physical Design, Mar 2023, Virtual event USA, United States. pp.124-132
International audience; A recently proposed methodology for electromigration (EM) assessment in on-chip power/ground grid of integrated circuits has been validated by means of measurements, performed on dedicated test grids. IR drop degradation in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c87e664502295538e2be9edfcb68855
https://doi.org/10.1145/3569052.3578922
https://doi.org/10.1145/3569052.3578922
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3bf022d113beac8188acce9a74932e5
https://doi.org/10.1109/irps48203.2023.10117811
https://doi.org/10.1109/irps48203.2023.10117811
Akademický článek
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Publikováno v:
ECS Meeting Abstracts. :846-846
In IC industry, the use of multiple die stack packaging has emerged to meet the increasing demand in miniaturization and improved functionality of mobile devices. During chip operation, transistor power dissipation raises temperature unevenly across
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c3c78c1e711ac9e56d4d2eb89a157e
https://doi.org/10.1149/ma2022-0217846mtgabs
https://doi.org/10.1149/ma2022-0217846mtgabs
Autor:
Armen Kteyan, Jun-Ho Choy, Valeriy Sukharev, Massimo Bertoletti, Carmelo Maiorca, Rossana Zadra, Massimo Inzaghi, Gabriele Gattere, Giancarlo Zinco, Paolo Valente, Roberto Bardelli, Alessandro Valerio, Pierluigi Rolandi, Mattia Monetti, Valentina Cuomo, Salvatore Santapà
Publikováno v:
Proceedings of the 2022 International Symposium on Physical Design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73ff8c281876392b81289a978bbbcc4c
https://doi.org/10.1145/3505170.3511798
https://doi.org/10.1145/3505170.3511798
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec67ed019ec2937acabf00a74461b280
https://doi.org/10.1109/irps48227.2022.9764415
https://doi.org/10.1109/irps48227.2022.9764415
Publikováno v:
In Journal of Physics and Chemistry of Solids 2008 69(11):2785-2790
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:643-651
A well-documented effect of the mechanical stresses generated by 3D IC packaging on the performance of electrical circuits, in some cases leading to their parametric failure, can be controlled by means of stress assessment EDA tools. Verification and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d1bd5251226da15534a745f16f880f1
https://doi.org/10.1109/tdmr.2017.2732826
https://doi.org/10.1109/tdmr.2017.2732826