Zobrazeno 1 - 10
of 566
pro vyhledávání: '"A. A. Konakov"'
Autor:
A. M. Konakov, I. I. Livshits
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 51, Iss 3, Pp 86-92 (2024)
Objective. The study examined the main aspects of building an information security system from the point of view of optimizing the resources spent and funds to ensure information security. Method. In this subject area, the possibilities of structural
Externí odkaz:
https://doaj.org/article/d83b56ae14f84a8e8ca8c03e89c312b1
Autor:
A. M. Konakov, I. I. Livshits
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 51, Iss 2, Pp 83-90 (2024)
Objective. The purpose of the research is to analyze the functionality and features of dynamic modeling as part of training specialists in the field of information security and countering various threats in the information space, taking into account
Externí odkaz:
https://doaj.org/article/d2127bce8f5f47c09b6c144a7d5af9a2
Autor:
A. A. Konakov, D. O. Filatov, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, Mahesh Kumar
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015007-015007-11 (2016)
Using the envelope-function approximation, the single-particle states of electrons and holes in spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO2, Al2O3, HfO2 and Si3N4) have been calculated. Ground state energies o
Externí odkaz:
https://doaj.org/article/7b04959ee8934aa5be750cdb2f2c1b17
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
The results of theoretical calculations of electronic states of the gallium oxide (Ga2O3) nanocrystals both doped with donor impurity and undoped have been presented in the paper. In the envelope function approximation, the structure, states and ener
Externí odkaz:
https://doaj.org/article/0da26a3cabd349abb93bc34b3d9d8bb0
Publikováno v:
Journal of Physics: Condensed Matter, 2022, Volume 34, Number 40, 405302
A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of
Externí odkaz:
http://arxiv.org/abs/2206.05528
Autor:
A. M. Konakov, A. G. Pevneva
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 50, Iss 4, Pp 109-114 (2024)
Objective. The purpose of the study is the functionality of designing, building and implementing protection systems taking into account the time factor. Method. The analysis of the functional interaction of the construction of three sequentially inte
Externí odkaz:
https://doaj.org/article/98b1da2f73a444abac56810e40a67c01
Autor:
Bitter, Ilya, Konakov, Valentin
In this paper, we derive a stability result for $L_1$ and $L_{\infty}$ perturbations of diffusions under weak regularity conditions on the coefficients. In particular, the drift terms we consider can be unbounded with at most linear growth, and we do
Externí odkaz:
http://arxiv.org/abs/2104.00407
By means the envelope function approximation, 8-band Kane model and a finite-difference scheme with the coordinate space discretization, we numerically performed calculations of the spin-orbit coupling parameters for 2D electron gas confined in both
Externí odkaz:
http://arxiv.org/abs/2103.16721
Autor:
Nikolskaya, Alena, Belov, Alexey, Mikhaylov, Alexey, Konakov, Anton, Tetelbaum, David, Korolev, Dmitry
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been
Externí odkaz:
http://arxiv.org/abs/2103.15867
Autor:
Nikolskaya, Alena, Korolev, Dmitry, Mikhaylov, Alexey, Pavlov, Dmitrii, Sushkov, Artem, Okulich, Evgenia, Chizhova, Anastasia, Konakov, Anton, Yunin, Pavel, Okhapkin, Andrey, Kraev, Stanislav, Yablonskiy, Artem, Yurasov, Dmitry, Zakharov, Vsevolod, Andreev, Boris, Tetelbaum, David
Publikováno v:
Journal of Applied Physics; 6/7/2024, Vol. 135 Issue 21, p1-15, 15p