Zobrazeno 1 - 10
of 61
pro vyhledávání: '"A. Cosceev"'
Publikováno v:
In Energy Procedia 2012 27:319-324
Publikováno v:
In Thin Solid Films 2010 518(6) Supplement 1:S281-S284
Autor:
Weber, F. *, Cosceev, A., Nateprov, A., Pfleiderer, C., Faißt, A., Uhlarz, M., Löhneysen, H.V.
Publikováno v:
In Physica B: Physics of Condensed Matter 2005 359:226-228
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
MOS transistor scaling faces major challenges from the rapid rise in the parasitic resistance as the source/drain (s/d) contact area is reduced. Millisecond annealing (MSA) can provide efficient dopant activation at s/d regions and reduce contact res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1f7ca9f2f2664c5d1553e0a4274534
https://doi.org/10.1109/iit.2018.8807969
https://doi.org/10.1109/iit.2018.8807969
Autor:
Christian Pfahler, Abhijeet Joshi, L. Rubin, Alexandr Cosceev, Markus Hagedorn, Paul J. Timans, M. Zwissler
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Achieving very high concentrations of electrically active dopants is essential for minimizing parasitic resistances in advanced CMOS devices. Existing methods are severely challenged by the limits on electrical activation of dopants imposed by their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3d06c7d5d9be21c5b05d6aadca87d8
https://doi.org/10.1109/iit.2016.7882864
https://doi.org/10.1109/iit.2016.7882864
Publikováno v:
Energy Procedia 27 (2012)
The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd2377de889b77871fb27e9da22a9177
Publikováno v:
In Journal of Magnetism and Magnetic Materials 2007 310(2) Part 3:e767-e768
Publikováno v:
physica status solidi c. 7:316-320
We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n-Si(001) at room temperature without further treatments. These materials provide relative dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::756c2e64b8c4551624688723cf7f3e79
https://doi.org/10.1002/pssc.200982477
https://doi.org/10.1002/pssc.200982477
Publikováno v:
Thin Solid Films. 518:S281-S284
We present first investigations of the electrical characteristics of high- k amorphous BaO, SrO and crystalline Ba 0.7 Sr 0.3 O films on n-Si(001). The MOS structures were grown in a UHV chamber on structured SiO 2 samples with Si(001) windows and we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d82f4a6a2bf7533caab97aac040d80c
https://doi.org/10.1016/j.tsf.2009.10.108
https://doi.org/10.1016/j.tsf.2009.10.108
Publikováno v:
Europhysics Letters (EPL). 76:121-127
In Nb/Ag layers, the induced superconductivity in Ag by Nb gives rise to diamagnetic screening currents in the Ag layer well below the transition temperature of the superconductor. By investigating the position dependence of the individual diamagneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73750547ee3edcae8a8f72c89250e7aa
https://doi.org/10.1209/epl/i2006-10233-3
https://doi.org/10.1209/epl/i2006-10233-3