Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A.‐M. Lanzillotto"'
Publikováno v:
Journal of Crystal Growth. 111:366-370
We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×10 5 cm 2 /V⋯s at 4 K) degenerate electron system. T
Autor:
J. H. Thomas, F. J. Tams, D. M. Hoffman, H. Gilmartin, L. R. Hewitt, A.‐M. Lanzillotto, D. J. Szostak, J. T. McGinn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:456-460
An investigation was made of Pt–Ir silicide films on (100)Si prepared by deposition of submonolayer thickness of Pt followed by 20–30 A of Ir. Submonolayer coverages of Pt induce a crystalline texture approaching an epitaxial relationship between
Publikováno v:
Surface Science. 228:255-259
We have investigated the effect of substrate temperature, T S , during growth by molecular beam epitaxy on the migration of Si atoms in δ- (or planar) doped GaAs and Al 0.25 Ga 0.75 As. Determinations of the extent of Si migration were made through
Autor:
C. W. Magee, A. M. Lanzillotto
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:983-986
The effect of electron stimulated desorption (ESD) during secondary ion mass spectrometry (SIMS) from BF+2 implanted SiO2 was investigated. We have quantitatively illustrated that the F+ depth profile is directly related to electron current density w
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2009-2011
We have investigated the migration of Si in delta (δ)‐doped GaAs and Al0.25Ga0.75As structures using secondary ion mass spectrometry. The results demonstrate that: (1) the extent of Si migration strongly depends on the substrate temperature Ts; (2
Publikováno v:
28th Fluid Dynamics Conference.
In this paper, we describe an investigation of structure and motion in fluidic microsystems using unique x-ray imaging, visualization and analysis techniques. By way of illustration, we have applied x-ray microtomography in an investigation of the in
Publikováno v:
1996 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
Publikováno v:
Surface Science. 191:15-27
The epitaxial growth of an adsorbed layer of NH 3 on top of chemisorbed CO on Ni(111) and Ni(110) surfaces was studied using ESDIAD. A strong interaction yielding an activation energy for NH 3 desorption of ∼12 kcal/mol was observed. This interacti
Publikováno v:
The Journal of Chemical Physics. 85:6186-6191
Temperature programmed desorption measurements for H2/Ni(111) yield two desorption states, β1(T=290 K) and β2(T=370 K) for saturation H coverage. The two states are found to have distinctly different angular distributions. β2‐H2 desorption is st
Publikováno v:
The Journal of Chemical Physics. 89:570-576
It is shown that alkali adatoms coadsorbed in the presence of adsorbed hydrogen on Ni(111) can cause a large increase in the cross section for H+ emission during electron stimulated desorption. This phenomenon was investigated using the digital ESDIA