Zobrazeno 1 - 10
of 157
pro vyhledávání: '"A Zharin"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 3, Pp 161-172 (2023)
Non-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a
Externí odkaz:
https://doaj.org/article/18c3f979e2594477a14af243f7061f06
Autor:
R. I. Vorobey, O. K. Gusev, A. I. Zharin, V. A. Mikitsevich, K. U. Pantsialeyeu, A. V. Samarina, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 2, Pp 135-144 (2023)
Surface electric potential measurements are widely used in non-destructive inspection and testing of precision surfaces, for example, in the production of semiconductor devices and integrated circuits. Features of the construction and application of
Externí odkaz:
https://doaj.org/article/ee52b2927f0c4559863eabf3caa2b1c2
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 1, Pp 18-26 (2023)
Measuring devices and systems containing sensors that require sinusoidal excitation are widely used in information and measurement technology both in production conditions and in research practice. Examples include various types of metal detectors, e
Externí odkaz:
https://doaj.org/article/3eb1d2c7144e4b3c99a243eedbd12bd6
Autor:
K. U. Pantsialeyeu, U. A. Mikitsevich, A. I. Svistun, R. I. Vorobey, O. K. Gusev, A. L. Zharin
Publikováno v:
Pribory i Metody Izmerenij, Vol 13, Iss 4, Pp 291-301 (2022)
Surface charge can be used as an information parameter about the change in the state of the material under the action of mechanical stresses. The aim of the work was to develop methods for studying deformation processes in metallic and polymeric mate
Externí odkaz:
https://doaj.org/article/cff9c4006ddb4a838d3b83798072ff71
Autor:
R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. U. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, L. I. Shadurskaya
Publikováno v:
Pribory i Metody Izmerenij, Vol 12, Iss 2, Pp 108-116 (2021)
One of the ways to solve multiple problems of optical diagnostics is to use photovoltaic converters based on semiconductors with intrinsic photoconductivity slightly doped with deep impurities which form several energy levels with different charge st
Externí odkaz:
https://doaj.org/article/692ca72b53bc4e2a95c9013d14cbe1cf
Autor:
Kanstantsin Pantsialeyeu, Anatoly Zharin, Oleg Gusev, Roman Vorobey, Andrey Tyavlovsky, Konstantin Tyavlovsky, Aliaksandr Svistun
Publikováno v:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, Vol 10, Iss 4 (2020)
The paper reviews the results of a study on the surface electrostatic charges of dielectrics obtained using the contact potential difference (CPD) technique. Initially, the CPD technique was only applied to the study of metal and semiconductor surfac
Externí odkaz:
https://doaj.org/article/fcda14c2444b4d05b5f4f34815a7c336
Publikováno v:
Jurnal JEETech. 4:9-14
Kabupaten Fakfak, Provinsi Papua Barat mempunyai Daerah Aliran Sungai dan Air Terjun, Sungai Air Besar adalah salah satu sungai yang berpeluang untuk dijadikan sebagai Pembangkit Listrik Tenaga Mikro Hidro (PLTMH). Adanya perbedaan elevasi aliran ant
Autor:
Valentina Chebodaeva, Mariya Sedelnikova, Aleksandr Kashin, Olga Bakina, Igor Khlusov, Anatoliy Zharin, Vladimir Egorkin, Igor Vyaliy, Yurii Sharkeev
Publikováno v:
Letters on Materials. 12:336-342
Autor:
K. U. Pantsialeyeu, A. U. Krautsevich, I. A. Rovba, V. I. Lysenko, R. I. Vorobey, O. K. Gusev, A. L. Zharin
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 386-397 (2017)
At present for analysis of the homogeneity of materials properties are becoming widely used various modifications of a scanning Kelvin probe. These methods allow mapping the spatial distribution of the electrostatic potential. Analysis of the electro
Externí odkaz:
https://doaj.org/article/42e9b5ec5a254ec8842716f814700a0c
Autor:
V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 344-356 (2017)
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little
Externí odkaz:
https://doaj.org/article/7ce66eec3f1e4c2aaa1698b4a81a3d81