Zobrazeno 1 - 10
of 32
pro vyhledávání: '"A Yeung SY"'
Autor:
Su, Wilson Yeung-Sy1,2, Lu, Victor Chien-Pin2, Wu, Chii-Bin1, Wang, Jyh-Shyang1, Shen, Ji-Lin1, Chiu, Kuan-Cheng1 kcchiu@cycu.edu.tw
Publikováno v:
Scientific Reports. 7/27/2020, Vol. 10 Issue 1, p1-9. 9p.
Autor:
Victor Chien-Pin Lu, Jyh-Shyang Wang, Kuan-Cheng Chiu, Ji-Lin Shen, Chii-Bin Wu, Wilson Yeung-Sy Su
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (tS = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a3f5cf7f764c68b805b88c3d9efa13
http://link.springer.com/article/10.1038/s41598-020-69153-1
http://link.springer.com/article/10.1038/s41598-020-69153-1
Akademický článek
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Autor:
Svette Reina Merden Santiago, Cheng-Ying Chen, Kuan-Cheng Chiu, Wilson Yeung-Sy Su, Chih-Yang Huang, Ji-Lin Shen, Chii-Bin Wu, Jyh-Shyang Wang, Chia-Cheng Chiang Hsieh
Publikováno v:
Nanotechnology. 31(22)
The pristine and diethylenetriamine (DETA)-doped tungsten disulfide quantum dots (WS2 QDs) with an average lateral size of about 5 nm have been synthesized using pulsed laser ablation (PLA). Introduction of the synthesized WS2 QDs on the InGaAs/AlGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74a354adc451e6b41a4acc532e69e78e
https://pubmed.ncbi.nlm.nih.gov/32050176
https://pubmed.ncbi.nlm.nih.gov/32050176
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Ching Wang, Chun-Yi Li, Wilson Yeung-Sy Su, Chii-Bin Wu, Ji-Lin Shen, Jyh-Shyang Wang, Bu-Wei Huang, Kuan-Cheng Chiu, Chih-Ting Chen
Publikováno v:
Nanotechnology. 32:145708
Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4485ceaabe60c59ab9ddb80f1700457b
https://doi.org/10.1088/1361-6528/abd438
https://doi.org/10.1088/1361-6528/abd438
Autor:
Su, Wilson Yeung-Sy, Wang, Ching, Chen, Chih-Ting, Huang, Bu-Wei, Li, Chun-Yi, Wu, Chii-Bin, Wang, Jyh-Shyang, Shen, Ji-Lin, Chiu, Kuan-Cheng
Publikováno v:
Nanotechnology; 4/2/2021, Vol. 32 Issue 14, p1-13, 13p
Publikováno v:
Optoelectronic Materials and Devices II.
In this work, we have made AlGaAs/GaAs gain-guided broad- area vertical-cavity surface-emitting lasers (VCSELs) in the 850-nm range. For higher power applications such as optical pumping and optical communications, board-area VCSELs and VCSEL arrays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee47e83a0fdd408c957863140031da4e
https://doi.org/10.1117/12.392195
https://doi.org/10.1117/12.392195
Publikováno v:
Optoelectronic Materials and Devices II.
We have made A1GaAs/GaAs gain-guided two-dimensional (8x8 and 4x4) vertical-cavity surface-emitting laser array inthe 850-nm range for optical communication applications. Higher optical power with nearly single transverse mode outputcan be achieved b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac454da73294eeed2bb21c4a959397f
https://doi.org/10.1117/12.392194
https://doi.org/10.1117/12.392194
Publikováno v:
Proceedings of SPIE; Nov2000 Part 2, Issue 1, p611-619, 9p