Zobrazeno 1 - 10
of 32
pro vyhledávání: '"A Y Leem"'
Publikováno v:
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Vol XLVIII-4-W5-2022, Pp 69-74 (2022)
This study aims to analyse the evolutionary characteristics of industrial DNA from a smart city perspective. Evolutionary characteristics are the structure of industrial DNA and the relationship between industries DNA cluster. The analysis results ar
Externí odkaz:
https://doaj.org/article/b62eea084753400782f683d55980c79f
Publikováno v:
International Journal of High School Research. 3:22-27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f151026e919fdff264a84d068b8fe11
https://doi.org/10.36838/v3i5.5
https://doi.org/10.36838/v3i5.5
Publikováno v:
05.02 - Monitoring airway disease.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9b6fb2ebe0565a9a1c23c9fca40c82
https://doi.org/10.1183/13993003.congress-2022.487
https://doi.org/10.1183/13993003.congress-2022.487
Autor:
D.Y. Kim, G.S. Kim, S.M. Jeon, M.Y. Cho, H.Y. Choi, M.S. Kim, D.-Y. Lee, J.S. Kim, G.-S. Eom, J.-Y. Leem
Publikováno v:
Acta Physica Polonica A. 117:941-944
D.Y. Kim, G.S. Kim, S.M. Jeon, M.Y. Cho, H.Y. Choi, M.S. Kim, D.-Y. Lee, J.S. Kim, J.S. Kim, G.-S. Eom, J.-Y. Leema,∗ Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea Lighting Module Research and Development, Samsung Electro-Me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90030e17e36a14412d786861e79b755f
https://doi.org/10.12693/aphyspola.117.941
https://doi.org/10.12693/aphyspola.117.941
Autor:
Sam Kyu Noh, Jin-Soo Kim, J. Y. Leem, Clare C. Byeon, Mun Seok Jeong, Jong Su Kim, Jun Oh Kim, Hoonsoo Kang, Sang-Youp Yim, Sang Jun Lee
Publikováno v:
Journal of the Korean Physical Society. 55:1051-1055
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18540cd644dfb90dc703c795a88c6304
https://doi.org/10.3938/jkps.55.1051
https://doi.org/10.3938/jkps.55.1051
Autor:
Min Young Cho, J. Y. Leem, Min Su Kim, Ghun Sik Kim, D. Y. Lee, Jong Su Kim, Do Yeob Kim, J. S. Son, Tae Hoon Kim, Jin-Soo Kim, Hyun Young Choi, Su Min Jeon
Publikováno v:
Journal of the Korean Physical Society. 54:1655-1659
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceedef36add4b9a1dfbb48d0d63b009c
https://doi.org/10.3938/jkps.54.1655
https://doi.org/10.3938/jkps.54.1655
Autor:
J. S. Son, Ghun Sik Kim, Hyukhyun Ryu, Jin-Soo Kim, Woo-Sik Park, Su Min Jeon, Hyun Young Choi, Min Young Cho, J. Y. Leem, Min Su Kim, D. Y. Lee, Tae Hoon Kim, Jong Su Kim, Do Yeob Kim
Publikováno v:
Journal of the Korean Physical Society. 54:673-677
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a0bb7a12d609663e36ee9005e990ed
https://doi.org/10.3938/jkps.54.673
https://doi.org/10.3938/jkps.54.673
Autor:
Jong Su Kim, Do Yeob Kim, Hyukhyun Ryu, Jin-Soo Kim, Woo-Sik Park, Ghun Sik Kim, Min Su Kim, D. Y. Lee, Hyun Young Choi, J. S. Son, Min Young Cho, Tae Hoon Kim, J. Y. Leem
Publikováno v:
Journal of the Korean Physical Society. 54:180-184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45160d8b483b57e8614f2ee2581aba9c
https://doi.org/10.3938/jkps.54.180
https://doi.org/10.3938/jkps.54.180
Autor:
J. Y. Leem, Jong Su Kim, J.I. Lee, S. K. Noh, Sang-Hyo Kim, In-Ho Bae, J. S. Son, Minhyon Jeon
Publikováno v:
Journal of Crystal Growth. 226:52-56
We present the optical and electrical properties of Mg doped GaAs epitaxial layer with various doping levels grown by molecular beam epitaxy (MBE). The double crystal X-ray diffraction measurement combined with carrier concentration results showed th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a47d3413e6ea5a8ffcc229964c122194
https://doi.org/10.1016/s0022-0248(01)01364-1
https://doi.org/10.1016/s0022-0248(01)01364-1
Publikováno v:
Thin Solid Films. 360:229-232
A 1 μm thick undoped GaAs buffer layer, a 1500 A thick n-type GaAs layer, an undoped 500 A thick AlAs layer and a 50 A thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a21935c5035487317c21cfa84cd5184
https://doi.org/10.1016/s0040-6090(99)00727-0
https://doi.org/10.1016/s0040-6090(99)00727-0