Zobrazeno 1 - 10
of 1 008
pro vyhledávání: '"A Vinattieri"'
Publikováno v:
Zeitschrift für Medizinische Physik, Vol 32, Iss 4, Pp 392-402 (2022)
The aim of this study is to investigate the feasibility of manufacturing thin real-time relative dosimeters for clinical radiotherapy (RT) with potential applications for transmission monitoring in vivo dosimetry and pre-treatment dose verifications.
Externí odkaz:
https://doaj.org/article/0c5d32c1fdea4b709bbf5a69a7ea6a57
Autor:
Bruzzi, Mara, Calisi, Nicola, Latino, Matteo, Falsini, Naomi, Vinattieri, Anna, Talamonti, Cinzia
Publikováno v:
In Zeitschrift fuer Medizinische Physik November 2022 32(4):392-402
Autor:
Biccari, F., Gabelloni, F., Burzi, E., Gurioli, M., Pescetelli, S., Agresti, A., Castillo, A. E. Del Rio, Ansaldo, A., Kymakis, E., Bonaccorso, F., Di Carlo, A., Vinattieri, A.
The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most
Externí odkaz:
http://arxiv.org/abs/1702.04159
Publikováno v:
Frontiers in Physics, Vol 11 (2023)
Introduction: This paper deals with the class of versatile semiconducting materials called perovskites, which have been deposited for the first time on flexible substrates and then tested for radiation detection monitoring applications.Methods: Lead
Externí odkaz:
https://doaj.org/article/f34e3ac7fd0f4199a0a73ca5042850fe
Autor:
Naomi Falsini, Andrea Ristori, Francesco Biccari, Nicola Calisi, Giammarco Roini, Paolo Scardi, Stefano Caporali, Anna Vinattieri
Publikováno v:
Journal of the European Optical Society-Rapid Publications, Vol 17, Iss 1, Pp 1-7 (2021)
Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of CsPbBr3 and CsPbCl3 has recently been obtained by Radio-Frequency magnetron sputtering. In this work we com
Externí odkaz:
https://doaj.org/article/e064dac4fb13425c87456ee50c8c6c16
Autor:
Dotti, Nicola, Sarti, Francesco, Bietti, Sergio, Azarov, Alexander, Kuznetsov, Andrej, Biccari, Francesco, Vinattieri, Anna, Sanguinetti, Stefano, Abbarchi, Marco, Gurioli, Massimo
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high tem
Externí odkaz:
http://arxiv.org/abs/1412.4520
Autor:
Naomi Falsini, Alberto Ubaldini, Flavio Cicconi, Antonietta Rizzo, Anna Vinattieri, Mara Bruzzi
Publikováno v:
Sensors, Vol 23, Iss 10, p 4930 (2023)
Halide perovskites are a novel class of semiconductors that have attracted great interest in recent decades due to their peculiar properties of interest for optoelectronics. In fact, their use ranges from the field of sensors and light emitters to io
Externí odkaz:
https://doaj.org/article/88e46a9ab3d74c37aaad78a9b78eca7f
Autor:
Enza Panzardi, Nicola Calisi, Nicoleta Enea, Ada Fort, Marco Mugnaini, Valerio Vignoli, Anna Vinattieri, Mara Bruzzi
Publikováno v:
Sensors, Vol 23, Iss 6, p 3265 (2023)
The response of resistive In2O3−x sensing devices was investigated as a function of the NO2 concentration in different operative conditions. Sensing layers are 150 nm thick films manufactured by oxygen-free room temperature magnetron sputtering dep
Externí odkaz:
https://doaj.org/article/938f4c4cb12f44d99158981138d9a968
Autor:
Giovanni Morello, Stefania Milanese, Maria Luisa De Giorgi, Nicola Calisi, Stefano Caporali, Francesco Biccari, Naomi Falsini, Anna Vinattieri, Marco Anni
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 306 (2023)
Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among o
Externí odkaz:
https://doaj.org/article/4f736a5921564f2393590e65b64f7ef4
Autor:
Vinattieri, A., Bogani, F., Cavigli, L., Manzi, D., Gurioli, M., Martin, D., Feltin, E., Carlin, J. -F., Buttè, R., Grandjean, N.
We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of
Externí odkaz:
http://arxiv.org/abs/1211.0824