Zobrazeno 1 - 10 of 62 pro vyhledávání: '"A V Zdoroveyshchev"'
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Akademický článek
Composition and thermoelectric properties of structures based on iron silicide grown by pulse laser deposition
Autor: Dmitri E. Nikolichev, Ruslan N. Kriukov, Alexey V. Nezhdanov, Anton V. Zdoroveyshchev, Yuri M. Kuznetsov, Daniil A. Zdoroveyshchev, Valery P. Lesnikov, Michael V. Dorokhin, Polina B. Demina, Alexey A. Skrylev
Publikováno v: Конденсированные среды и межфазные границы, Vol 25, Iss 3 (2023)
Silicon compounds have a wide range of electrical properties. In particular, the possibility of creating thermoelectric converters based on them looks extremely attractive. The use of most silicides as thermoelectrics today is limited by their low ef
Externí odkaz: https://doaj.org/article/1a407871aee248dbbcd7488b30354246
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4
Effect of Ion Irradiation on the Magnetic Properties of CoPt Films
Autor: M. V. Dorokhin, A. V. Zdoroveyshchev, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, Yu. A. Dudin, O. V. Vikhrova, I. L. Kalentyeva, Alexandr V. Sadovnikov, A. V. Kudrin, Yu. A. Danilov
Publikováno v: Physics of the Solid State. 63:386-394
The possibility of using implantation of 20-keV He+ ions for modification of the domain structure and magnetic properties of CoPt films (formed by the electron-beam evaporation method) with different cobalt contents (Co0.45Pt0.55 and Co0.35Pt0.65) ha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13fc3429fd2291baa0461968a97d8734
https://doi.org/10.1134/s1063783421030082
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6
Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy
Autor: M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. A. Danilov, M. P. Temiryazeva, S. M. Plankina, P. B. Demina, O. V. Vikhrova, Ivan Antonov, B. N. Zvonkov, Aleksey Nezhdanov, M. N. Drozdov, R. N. Kriukov
Publikováno v: Semiconductors. 54:956-960
A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained b
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9cfd1e937a1d6d87ad1c8e496383727
https://doi.org/10.1134/s106378262008028x
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7
Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer
Autor: I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, E. A. Larionova, B. N. Zvonkov, O. A. Soltanovich, A. V. Kudrin, V. A. Koval’skii, M. V. Dorokhin, A. V. Zdoroveyshchev
Publikováno v: Physics of the Solid State. 62:423-430
Diode p-(GaMn)As/n-InGaAs/n+-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6–8% is observed i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e1fa9b6308af81e5a43ce708094b1d0
https://doi.org/10.1134/s1063783420030270
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8
Long-Range Magnetic Interaction in InGaAs/GaAs/δ-〈Mn〉 Heterostructures
Autor: P. B. Demina, M. V. Ved, E. I. Malysheva, M. V. Dorokhin, A. V. Zdoroveyshchev, A. V. Kudrin
Publikováno v: Technical Physics Letters. 46:87-90
Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff1c855ed62edf3aac0851b458450bb3
https://doi.org/10.1134/s1063785020010204
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